International business machines corporation (20240130245). MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE simplified abstract

MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE

Organization Name

international business machines corporation

Inventor(s)

Oscar Van Der Straten of Guilderland Center NY (US)

Koichi Motoyama of Clifton Park NY (US)

Chih-Chao Yang of Glenmont NY (US)

MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240130245 titled 'MRAM DEVICE STRUCTURE WITH IMPROVED TOP ELECTRODE

Simplified Explanation

The abstract describes a method of forming an MRAM structure, involving several steps such as forming sacrificial dielectric and ferromagnetic layers, creating via holes, filling the opening with conductive material, and forming top and bottom electrodes.

• Forming sacrificial dielectric layer on top of a bottom contact
• Creating a stack of ferromagnetic layers, tunnel barrier layer, and hard mask
• Forming an interlevel-dielectric layer surrounding the stack
• Creating via holes in the ILD layer to expose the sacrificial dielectric layer
• Selectively removing the sacrificial dielectric layer to create an opening underneath the first ferromagnetic layer
• Filling the opening with a first conductive material to form a bottom electrode
• Removing the hard mask to expose the second ferromagnetic layer
• Forming a top electrode of a second conductive material on top of the second ferromagnetic layer

Potential Applications

The technology can be applied in the manufacturing of MRAM structures for use in various electronic devices such as computers, smartphones, and IoT devices.

Problems Solved

This technology solves the problem of efficiently forming MRAM structures with improved performance and reliability.

Benefits

The method provides a reliable and efficient way to fabricate MRAM structures, leading to enhanced device performance and durability.

Potential Commercial Applications

The technology can be utilized in the semiconductor industry for producing MRAM devices, leading to advancements in memory storage technology.

Possible Prior Art

One possible prior art in this field is the use of different materials and methods for forming MRAM structures, such as various deposition techniques and patterning processes.

Unanswered Questions

How does this method compare to existing techniques for forming MRAM structures?

The article does not provide a direct comparison with other methods currently used in the industry.

What are the specific performance improvements achieved by this method?

The article does not detail the specific performance enhancements resulting from the use of this particular method.

Original Abstract Submitted

embodiments of present invention provide a method of forming a mram structure. the method includes forming a sacrificial dielectric layer on top of a bottom contact; forming a stack of a first ferromagnetic layer, a tunnel barrier layer, a second ferromagnetic layer, and at least one hard mask on top of the sacrificial dielectric layer; forming an interlevel-dielectric (ild) layer surrounding the stack; creating one or more via holes in the ild layer to expose the sacrificial dielectric layer; selectively removing the sacrificial dielectric layer to create an opening underneath the first ferromagnetic layer; filling the opening with a first conductive material to form a bottom electrode; removing the at least one hard mask to expose the second ferromagnetic layer; and forming a top electrode of a second conductive material on top of the second ferromagnetic layer. an mram structure formed thereby is also provided.