International business machines corporation (20240107896). MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE simplified abstract

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MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

Organization Name

international business machines corporation

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Jonathan Zanhong Sun of Shrub Oak NY (US)

MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240107896 titled 'MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE

Simplified Explanation

The patent application describes a magnetoresistive random access memory (MRAM) structure with a chiral spin-orbit-torque (SOT) metal bottom electrode surrounded by a via dielectric, enabling the charge current, spin current, and spin polarization directions to be in the same direction perpendicular to the surface of the chiral SOT via structure.

  • Chiral spin-orbit-torque (SOT) metal bottom electrode under the bottom magnetic free layer
  • Chiral SOT metal bottom electrode surrounded by a via dielectric
  • Enables charge current, spin current, and spin polarization directions to be in the same direction
  • Perpendicular direction to the surface of the chiral SOT via structure

Potential Applications

This technology could be applied in:

  • Data storage devices
  • Computing systems
  • Magnetic sensors

Problems Solved

This technology helps to:

  • Improve data storage efficiency
  • Enhance computing speed
  • Increase magnetic sensor sensitivity

Benefits

The benefits of this technology include:

  • Higher performance in data storage
  • Faster computing processes
  • More accurate magnetic sensing

Potential Commercial Applications

This technology could be commercially applied in:

  • Electronics industry
  • Data centers
  • Research institutions

Possible Prior Art

One possible prior art for this technology could be:

  • Previous MRAM structures with different electrode configurations

Unanswered Questions

How does this technology compare to existing MRAM structures in terms of performance and efficiency?

This article does not provide a direct comparison with existing MRAM structures in terms of performance and efficiency. It would be helpful to understand how this new structure improves upon current technologies.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not address the potential challenges or limitations of implementing this technology in practical applications. It would be important to know if there are any obstacles that could hinder the widespread adoption of this innovation.


Original Abstract Submitted

a magnetoresistive random access memory (mram) structure is provided that includes a chiral spin-orbit-torque (sot) metal bottom electrode under the bottom magnetic free layer where the chiral sot metal bottom electrode is surrounded by a via dielectric. the chiral sot metal bottom electrode enables the charge current, spin current and spin polarization directions to be in the same direction which is perpendicular to the surface of the chiral sot via structure.

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