International business machines corporation (20240105620). INTERCONNECT WITH DISCONNECTED LINER AND METAL CAP simplified abstract

INTERCONNECT WITH DISCONNECTED LINER AND METAL CAP

Organization Name

international business machines corporation

Inventor(s)

Koichi Motoyama of Clifton Park NY (US)

Oscar Van Der Straten of Guilderland Center NY (US)

Chih-Chao Yang of Glenmont NY (US)

INTERCONNECT WITH DISCONNECTED LINER AND METAL CAP - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240105620 titled 'INTERCONNECT WITH DISCONNECTED LINER AND METAL CAP

Simplified Explanation

The interconnect structure described in the patent application includes various layers such as a diffusion barrier layer, a liner layer, a spacer layer, an interconnect metal, and a metal cap. These layers are arranged in a specific configuration to improve the performance and reliability of the interconnect structure in electronic devices.

• Diffusion barrier layer: A layer that is placed on the exterior surfaces of an opening in a dielectric layer to prevent diffusion of materials.
• Liner layer: Positioned on the bottom surface and sidewalls of the diffusion barrier layer to provide additional protection and support.
• Spacer layer: Placed on the top surface of the diffusion barrier layer and the exposed sidewalls of the opening to create space for the interconnect metal.
• Interconnect metal: Positioned on the liner layer and the spacer layer to facilitate electrical connections.
• Metal cap: Positioned on top of the interconnect metal to further protect and enhance the performance of the interconnect structure.

Potential Applications

The technology described in this patent application could be applied in the manufacturing of various electronic devices such as smartphones, computers, and other consumer electronics that require high-performance interconnect structures.

Problems Solved

This technology addresses the issue of material diffusion in interconnect structures, which can lead to performance degradation and reliability issues in electronic devices.

Benefits

The benefits of this technology include improved performance, reliability, and longevity of electronic devices due to the enhanced interconnect structure design.

Potential Commercial Applications

The technology could be commercially applied in the semiconductor industry for the production of advanced electronic devices with superior interconnect structures.

Possible Prior Art

One possible prior art for this technology could be the use of diffusion barrier layers in interconnect structures, but the specific configuration and arrangement of layers described in this patent application may be novel and inventive.

How does this technology compare to existing interconnect structures in terms of performance and reliability?

The article does not provide a direct comparison between this technology and existing interconnect structures, leaving the reader to wonder about the specific advantages of this innovation.

What are the potential challenges in implementing this technology on a large scale in electronic device manufacturing?

The article does not address the potential challenges or limitations of implementing this technology on a large scale, leaving room for speculation on the practicality of its commercial application.

Original Abstract Submitted

an interconnect structure includes a diffusion barrier layer disposed on exterior surfaces of an opening in a dielectric layer. a top surface of the diffusion barrier layer is below a top surface of the opening. a liner layer is disposed on a bottom surface and sidewalls of the diffusion barrier layer. a spacer layer is disposed on the top surface of the diffusion barrier layer and the liner layer and exposed sidewalls of the opening. an interconnect metal is disposed on the liner layer and the spacer layer. a metal cap is disposed on the interconnect metal.