International business machines corporation (20240105583). INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE simplified abstract
Contents
- 1 INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE
Organization Name
international business machines corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Albert M. Chu of Nashua NH (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105583 titled 'INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE
Simplified Explanation
The semiconductor chip device described in the patent application includes a substrate with a decoupling capacitor formed by a power input line and ground line, with a region doped with a second dielectric material of higher permittivity value in between.
- The substrate of the semiconductor chip device contains a decoupling capacitor formed by a power input line and ground line.
- A region of the substrate between the power input line and ground line is doped with a second dielectric material of higher permittivity value.
- The region doped with the second dielectric material lacks a signal body, making it ideal for decoupling capacitance.
- By utilizing the unused space in the substrate for power delivery elements, noise in the circuit can be better controlled, leading to increased reliability of the chip device.
Potential Applications
This technology could be applied in various semiconductor devices requiring improved noise control and reliability, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
1. Noise control in semiconductor circuits. 2. Enhancing reliability of chip devices.
Benefits
1. Improved noise control. 2. Increased reliability. 3. Efficient use of substrate space.
Potential Commercial Applications
"Enhanced Noise Control Technology for Semiconductor Devices"
Possible Prior Art
Prior art related to decoupling capacitors in semiconductor devices may exist, but specific examples are not provided in the patent application.
Unanswered Questions
How does the addition of decoupling capacitance impact the overall performance of the semiconductor chip device?
The patent application does not delve into the specific performance improvements resulting from the incorporation of decoupling capacitance in the substrate.
Are there any limitations or drawbacks to this technology that need to be considered?
The patent application does not address any potential limitations or drawbacks associated with the implementation of this technology in semiconductor chip devices.
Original Abstract Submitted
a semiconductor chip device includes a substrate with a first dielectric material of a first permittivity value. a power input line and ground line are positioned in the substrate and arranged to form a decoupling capacitor. a region of the substrate in between the power input line and the ground line is doped with a second dielectric material of a second permittivity value that is higher than the first permittivity value. the region doped with the second dielectric material lacks a signal body. by incorporating a region with higher permittivity, in what is generally unused space for power delivery, the region becomes a decoupling capacitor for nearby power delivery elements. by adding decoupling capacitance to the previously unused space, noise in a circuit is more easily controlled and the chip device becomes more reliable.
