International business machines corporation (20240099035). DOUBLE-SIDED EMBEDDED MEMORY ARRAY simplified abstract
Contents
- 1 DOUBLE-SIDED EMBEDDED MEMORY ARRAY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DOUBLE-SIDED EMBEDDED MEMORY ARRAY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
DOUBLE-SIDED EMBEDDED MEMORY ARRAY
Organization Name
international business machines corporation
Inventor(s)
Wu-Chang Tsai of Albany NY (US)
Ailian Zhao of Slingerlands NY (US)
Ashim Dutta of Clifton Park NY (US)
Chih-Chao Yang of Glenmont NY (US)
DOUBLE-SIDED EMBEDDED MEMORY ARRAY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099035 titled 'DOUBLE-SIDED EMBEDDED MEMORY ARRAY
Simplified Explanation
A semiconductor structure is presented that integrates two different types of memory devices into a single CMOS chip by connecting a first memory array and a second memory array with nanosheet stacks and backside contacts.
- The first memory array and second memory array are directly connected by nanosheet stacks.
- The structure defines a double-sided memory array on a CMOS wafer.
- The nanosheet stacks separate the two memory arrays, allowing for integration of different memory devices.
Potential Applications
This technology could be applied in:
- High-performance computing
- Data storage solutions
- Mobile devices
Problems Solved
This innovation addresses:
- Integration challenges of different memory devices
- Space constraints in semiconductor design
Benefits
The benefits of this technology include:
- Increased memory capacity
- Enhanced performance
- Efficient use of space on a chip
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing
- Memory chip production
- Consumer electronics industry
Possible Prior Art
One possible prior art for this technology could be the integration of different memory devices on a single chip using traditional interconnect methods.
Unanswered Questions
How does this technology impact power consumption in devices?
The article does not provide information on the power consumption implications of integrating two different memory devices on a single chip.
What are the potential challenges in scaling this technology for mass production?
The article does not address the scalability challenges that may arise when implementing this technology on a larger scale for commercial production.
Original Abstract Submitted
a semiconductor structure is presented including a first memory array and a second memory array directly connected to the first memory array by nanosheet stacks and backside contacts. the first and second memory arrays collectively define a double-sided memory array on a complementary metal oxide semiconductor (cmos) wafer. the nanosheet stacks separate the first memory array from the second memory array so that two different types of memory devices are integrated together into a single cmos chip.
