International business machines corporation (20240096871). PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL simplified abstract
Contents
- 1 PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL
Organization Name
international business machines corporation
Inventor(s)
Terence Hook of Jericho Center VT (US)
Junli Wang of Slingerlands NY (US)
Miaomiao Wang of Albany NY (US)
PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096871 titled 'PROTECTION DIODE TO PREVENT CHARGE DAMAGE DURING MOL
Simplified Explanation
The integrated circuit described in the patent application includes a protection diode with multiple gates and source/drain contacts, connected to a device under test (DUT) with its own set of gates and source/drain contacts. The connection between the protection diode and the DUT is made through gate contacts, CA contacts, or a buried power rail, with additional layers for gate oxide protection before M1 formation.
- The integrated circuit includes a protection diode with multiple gates and source/drain contacts.
- The DUT is connected to the protection diode through gate contacts, CA contacts, or a buried power rail.
- Additional layers are used for gate oxide protection before M1 formation.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced integrated circuits with improved protection features.
Problems Solved
This technology solves the problem of ensuring proper electrical connection and protection between the protection diode and the DUT in integrated circuits.
Benefits
The benefits of this technology include enhanced reliability and performance of integrated circuits by providing efficient protection and connection mechanisms.
Potential Commercial Applications
One potential commercial application of this technology is in the production of high-performance electronic devices that require reliable protection against electrical faults.
Possible Prior Art
Prior art in the field of integrated circuits may include similar methods of connecting and protecting components within a semiconductor device, but the specific approach outlined in this patent application may be novel and innovative.
Unanswered Questions
How does this technology compare to existing methods of connecting and protecting components in integrated circuits?
This article does not provide a direct comparison to existing methods in the field of integrated circuits.
What are the specific performance improvements that can be expected from implementing this technology in integrated circuits?
The article does not detail the specific performance improvements that can be achieved by implementing this technology.
Original Abstract Submitted
an integrated circuit is presented including a protection diode including a plurality of first gates and a plurality of first source/drain (s/d) contacts and a device under test (dut) including a plurality of second gates and a plurality of second s/d contacts, the dut being electrically connected to the protection diode by either at least one gate contact or at least on ca contact or at least one buried power rail (bpr). the protection diode is electrically connected to the dut by middle-of-line (mol) layers for gate oxide protection before m1 formation.
