International business machines corporation (20240096692). HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract
Contents
- 1 HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
Organization Name
international business machines corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Albert M. Chu of Nashua NH (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096692 titled 'HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
Simplified Explanation
The abstract describes a semiconductor device with two different types of vias in a metal layer: a single damascene structure and a dual damascene structure.
- The semiconductor device includes a first via in a metal layer, which is a single damascene structure.
- The semiconductor device also includes a second via in the metal layer, which is a dual damascene structure.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology solves the problem of efficiently connecting different layers in a semiconductor device, improving performance and reliability.
Benefits
The use of single and dual damascene structures in vias can enhance the overall functionality and efficiency of semiconductor devices.
Potential Commercial Applications
The commercial applications of this technology could include the production of high-performance electronic devices for various industries, such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art in this field could be the use of traditional via structures in semiconductor devices, which may not offer the same level of efficiency and performance as the single and dual damascene structures described in this patent application.
=== What are the specific materials used in the fabrication of these vias? The specific materials used in the fabrication of these vias are not mentioned in the abstract. Further details on the materials could provide insights into the manufacturing process and potential limitations.
=== How does the dual damascene structure differ from the single damascene structure in terms of performance and reliability? The abstract does not provide specific details on how the dual damascene structure differs from the single damascene structure. Understanding the differences in performance and reliability between these two structures could help in assessing the potential advantages of this technology.
Original Abstract Submitted
a semiconductor device and formation thereof. the semiconductor device includes a first via in a metal layer, wherein the first via is a single damascene structure. the semiconductor device further includes a second via in the metal level, wherein the second via is a dual damascene structure.
