International business machines corporation (20240107896). MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE simplified abstract
Contents
- 1 MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
Organization Name
international business machines corporation
Inventor(s)
Pouya Hashemi of Purchase NY (US)
Jonathan Zanhong Sun of Shrub Oak NY (US)
MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107896 titled 'MRAM STRUCTURE WITH CHIRAL SPIN-ORBIT-TORQUE METAL ELECTRODE
Simplified Explanation
The patent application describes a magnetoresistive random access memory (MRAM) structure with a chiral spin-orbit-torque (SOT) metal bottom electrode surrounded by a via dielectric, enabling the charge current, spin current, and spin polarization directions to be in the same direction perpendicular to the surface of the chiral SOT via structure.
- Chiral spin-orbit-torque (SOT) metal bottom electrode under the bottom magnetic free layer
- Chiral SOT metal bottom electrode surrounded by a via dielectric
- Enables charge current, spin current, and spin polarization directions to be in the same direction
- Perpendicular direction to the surface of the chiral SOT via structure
Potential Applications
This technology could be applied in:
- Data storage devices
- Computing systems
- Magnetic sensors
Problems Solved
This technology helps to:
- Improve data storage efficiency
- Enhance computing speed
- Increase magnetic sensor sensitivity
Benefits
The benefits of this technology include:
- Higher performance in data storage
- Faster computing processes
- More accurate magnetic sensing
Potential Commercial Applications
This technology could be commercially applied in:
- Electronics industry
- Data centers
- Research institutions
Possible Prior Art
One possible prior art for this technology could be:
- Previous MRAM structures with different electrode configurations
Unanswered Questions
How does this technology compare to existing MRAM structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing MRAM structures in terms of performance and efficiency. It would be helpful to understand how this new structure improves upon current technologies.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address the potential challenges or limitations of implementing this technology in practical applications. It would be important to know if there are any obstacles that could hinder the widespread adoption of this innovation.
Original Abstract Submitted
a magnetoresistive random access memory (mram) structure is provided that includes a chiral spin-orbit-torque (sot) metal bottom electrode under the bottom magnetic free layer where the chiral sot metal bottom electrode is surrounded by a via dielectric. the chiral sot metal bottom electrode enables the charge current, spin current and spin polarization directions to be in the same direction which is perpendicular to the surface of the chiral sot via structure.