International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract
Contents
- 1 HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR
Organization Name
international business machines corporation
Inventor(s)
Heng Wu of Santa Clara CA (US)
Chen Zhang of Guilderland NY (US)
Min Gyu Sung of Latham NY (US)
Ruilong Xie of Niskayuna NY (US)
Julien Frougier of Albany NY (US)
HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105609 titled 'HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR
Simplified Explanation
The semiconductor device described in the abstract includes a first device located on the frontside of a semiconductor substrate, an inductor integrated with a first backside metal (BSM) stack on the backside of the substrate, and a first electrical contact connecting the frontside and backside of the substrate.
- The semiconductor device includes a first device on the frontside of the substrate.
- An inductor is located on the backside of the substrate and integrated with a first BSM stack.
- A first electrical contact is situated between the frontside and backside of the substrate.
- One end of the first electrical contact is connected to the first BSM stack, while the other end is connected to a first source/drain region of the first device.
Potential Applications
The technology described in this patent application could be applied in:
- Power management systems
- Radio frequency (RF) circuits
- Wireless communication devices
Problems Solved
This technology helps address the following issues:
- Efficient power distribution
- Enhanced signal processing capabilities
- Improved integration of components on a semiconductor substrate
Benefits
The semiconductor device offers the following benefits:
- Higher performance in power management applications
- Increased efficiency in RF circuits
- Enhanced functionality in wireless communication devices
Potential Commercial Applications
The technology has potential commercial applications in:
- Mobile devices
- Internet of Things (IoT) devices
- Automotive electronics
Possible Prior Art
One possible prior art for this technology could be the integration of inductors on semiconductor substrates for improved circuit performance.
Unanswered Questions
How does this technology compare to existing inductor integration methods?
This article does not provide a direct comparison with other methods of integrating inductors on semiconductor substrates. Further research and analysis would be needed to determine the advantages and disadvantages of this approach compared to existing techniques.
What are the specific design considerations for implementing this technology in different types of semiconductor devices?
The article does not delve into the specific design considerations for implementing this technology in various semiconductor devices. Understanding the specific requirements and constraints for different applications would be crucial for successful implementation.
Original Abstract Submitted
a semiconductor device a first device located on a frontside of a semiconductor substrate. the semiconductor device further includes an inductor located on a backside of the semiconductor substrate and integrated with a first backside metal (bsm) stack. the semiconductor device further includes a first electrical contact located between the frontside and the backside of the semiconductor substrate. a first end of the first electrical contact is connected to the first bsm stack and a second end of the first electrical contact is connected to a first source/drain region of the first device.