Intel corporation (20240128340). INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract
Contents
- 1 INTEGRATED CIRCUIT CONTACT STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT CONTACT STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT CONTACT STRUCTURES
Organization Name
Inventor(s)
Patrick Morrow of Portland OR (US)
Glenn A. Glass of Portland OR (US)
Anand S. Murthy of Portland OR (US)
Rishabh Mehandru of Portland OR (US)
INTEGRATED CIRCUIT CONTACT STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240128340 titled 'INTEGRATED CIRCUIT CONTACT STRUCTURES
Simplified Explanation
The abstract describes an integrated circuit (IC) contact structure that includes an electrical element, a metal layer on the electrical element, and a semiconductor material on the metal layer.
- The IC contact structure consists of an electrical element, a metal layer, and a semiconductor material.
- The metal layer serves to conductively couple the semiconductor material and the electrical element.
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as microprocessors, memory chips, and sensors.
Problems Solved
This innovation helps to improve the conductivity and reliability of IC contact structures, which are crucial for the performance of electronic devices.
Benefits
The integrated circuit contact structure described in this patent application offers enhanced electrical connectivity and efficiency, leading to improved overall device performance.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the development of advanced electronic devices with higher performance and reliability.
Possible Prior Art
One possible prior art could be the use of different materials in IC contact structures to improve conductivity and reliability. However, the specific combination of an electrical element, metal layer, and semiconductor material as described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing IC contact structures in terms of performance and reliability?
The article does not provide a direct comparison with existing IC contact structures to evaluate the performance and reliability improvements offered by this technology.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges that may arise in scaling up the production of IC contact structures using this technology.
Original Abstract Submitted
disclosed herein are integrated circuit (ic) contact structures, and related devices and methods. for example, in some embodiments, an ic contact structure may include an electrical element, a metal on the electrical element, and a semiconductor material on the metal. the metal may conductively couple the semiconductor material and the electrical element.
