Intel corporation (20240105589). INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES simplified abstract
Contents
- 1 INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES
Organization Name
Inventor(s)
Shao Ming Koh of Tigard OR (US)
Patrick Morrow of Portland OR (US)
Sukru Yemenicioglu of Portland OR (US)
Nikhil Jasvant Mehta of Portland OR (US)
INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105589 titled 'INTEGRATED CIRCUIT (IC) DEVICE WITH METAL LAYER INCLUDING STAGGERED METAL LINES
Simplified Explanation
The patent application describes an IC device with a metal layer containing staggered metal lines in multiple levels, aligned for maximum width optimization using DSA of a diblock copolymer. Vias in multiple levels connect the metal layer to other components, with a recess and deposition process used to form vias and metal lines without interfaces.
- Metal layer with staggered metal lines in multiple levels
- Alignment of metal lines for width optimization using DSA of a diblock copolymer
- Vias in multiple levels connecting metal layer to other components
- Formation of vias and metal lines without interfaces through a recess and deposition process
Potential Applications
This technology could be applied in the manufacturing of integrated circuits, specifically in the layout and connection of metal layers and vias.
Problems Solved
This technology solves the problem of optimizing the width of metal lines in an IC device while ensuring proper alignment and connection to other components.
Benefits
The benefits of this technology include improved efficiency in IC manufacturing, enhanced performance of the device, and potentially reduced production costs.
Potential Commercial Applications
A potential commercial application of this technology could be in the semiconductor industry for the production of advanced integrated circuits with optimized metal layer layouts.
Possible Prior Art
One possible prior art for this technology could be the use of DSA of diblock copolymers in semiconductor manufacturing processes to improve the alignment and patterning of components.
Unanswered Questions
How does this technology compare to traditional methods of metal layer and via connection in IC devices?
This article does not provide a direct comparison between this technology and traditional methods of metal layer and via connection in IC devices.
What are the specific challenges in implementing DSA of a diblock copolymer for aligning metal lines in an IC device?
This article does not delve into the specific challenges that may arise in implementing DSA of a diblock copolymer for aligning metal lines in an IC device.
Original Abstract Submitted
an ic device includes a metal layer that includes staggered metal lines. the metal lines are in two or more levels along a direction. there may be one or more metal lines in each level. at least some of the metal lines are aligned along the direction so that widths of the metal lines may be maximized for a given total width of the metal layer. the alignment of the metal lines may be achieved through dsa of a diblock copolymer. the metal layer may be connected to vias in two or more levels. the vias may be also connected to another metal layer or a semiconductor device in a feol section of the ic device. a via and the metal line connected to the via may be formed through a same recess and deposition process to eliminate interface between the via and metal line.
