ISOLATION STRUCTURE CONFIGURED TO REDUCE CROSS TALK IN IMAGE SENSOR: abstract simplified (17861708)

• This abstract for appeared for patent application number 17861708 Titled 'ISOLATION STRUCTURE CONFIGURED TO REDUCE CROSS TALK IN IMAGE SENSOR'

Simplified Explanation

The abstract describes a type of image sensor that includes a photodetector embedded in a semiconductor substrate. The sensor also has a dielectric structure on one side of the substrate, and an isolation structure that extends from the dielectric structure into the substrate. This isolation structure surrounds the photodetector and is made of a different material than the dielectric structure.

Original Abstract Submitted

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed within a semiconductor substrate. A dielectric structure is disposed on a first side of the semiconductor substrate. An isolation structure extends from the dielectric structure into the first side of the semiconductor substrate. The isolation structure laterally wraps around the photodetector and comprises an upper portion disposed above the first side of the semiconductor substrate and directly contacting sidewalls of the dielectric structure. The isolation structure comprises a first material different from a second material of the dielectric structure.