INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME: abstract simplified (18334136)

• This abstract for appeared for patent application number 18334136 Titled 'INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME'

Simplified Explanation

This abstract describes a semiconductor device that includes various components such as a substrate, gate structure, source/drain structures, backside via, and a power rail. The gate structure and source/drain structures are aligned along a certain direction on the front-side surface of the substrate. The backside via, which is located on the backside surface of the substrate, extends in a different direction perpendicular to the first direction. The backside via has two portions - one aligned with the source/drain structures and the other aligned with the gate structure. The first portion of the backside via has a wider width along the first direction compared to the second portion. The power rail is in contact with the backside via.

Original Abstract Submitted

A semiconductor device includes a substrate, a gate structure, source/drain structures, a backside via, and a power rail. The gate structure extends along a first direction parallel with a front-side surface of the substrate. The backside via extends along a second direction parallel with the front-side surface of the substrate but perpendicular to the first direction, the backside via has a first portion aligned with one of the source/drain structures along the first direction and a second portion aligned with the gate structure along the first direction, the first portion of the backside via has a first width along the first direction, and the second portion of the backside via has a second width along the first direction, in which the first width is greater than the second width. The power rail is on a backside surface of the substrate and in contact with the backside via.