Canon kabushiki kaisha (20240120425). SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM simplified abstract
Contents
SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM
Organization Name
Inventor(s)
TAKESHI Yoshioka of Kanagawa (JP)
SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120425 titled 'SEMICONDUCTOR ELEMENT AND TERAHERTZ WAVE SYSTEM
Simplified Explanation
The semiconductor element described in the patent application is designed for generating or detecting terahertz waves. It includes a substrate, a first electrode, a semiconductor layer with a gain medium for terahertz waves, a dielectric layer, and a second electrode with specific inclinations and an intermediate portion.
- Explanation of the patent/innovation:
- The semiconductor element is designed to generate or detect terahertz waves. - It includes a substrate, a first electrode, a semiconductor layer with a gain medium for terahertz waves, a dielectric layer, and a second electrode. - The second electrode has specific inclinations and an intermediate portion with a planar terrace.
- Potential applications of this technology:
- Terahertz imaging and sensing - Terahertz communication systems - Terahertz spectroscopy
- Problems solved by this technology:
- Efficient generation and detection of terahertz waves - Improved performance and sensitivity in terahertz applications
- Benefits of this technology:
- Enhanced terahertz wave generation and detection capabilities - Increased accuracy and resolution in terahertz imaging and sensing - Improved communication and spectroscopy systems using terahertz waves
- Potential commercial applications of this technology:
- Medical imaging devices - Security scanners - Communication equipment for high-speed data transfer
- Possible prior art:
- Prior art related to semiconductor elements for terahertz wave generation and detection - Previous patents on terahertz imaging and communication technologies
Questions: 1. What specific inclinations are used in the design of the second electrode in the semiconductor element? 2. How does the presence of a planar terrace in the intermediate portion of the second electrode contribute to the performance of the semiconductor element in generating or detecting terahertz waves?
Original Abstract Submitted
a semiconductor element for generating or detecting a terahertz wave is provided. the element includes a substrate, a first electrode, a semiconductor layer disposed between the substrate and the first electrode and including a gain medium for the terahertz wave, a dielectric layer disposed to cover the substrate, and a second electrode disposed on the dielectric layer and connected to the first electrode via an opening provided in the dielectric layer. a portion of the second electrode disposed in the opening includes a first inclined portion, a second inclined portion disposed between the first inclined portion and the first electrode and is less inclined than the first inclined portion, and an intermediate portion connecting the first and second inclined portions. the intermediate portion includes a planar terrace and the terrace is less inclined than the first and second inclined portions.
