CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE: abstract simplified (18176750)

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  • This abstract for appeared for patent application number 18176750 Titled 'CHALCOGENIDE MATERIAL, SWITCHING DEVICE INCLUDING THE CHALCOGENIDE MATERIAL, AND MEMORY DEVICE INCLUDING THE SWITCHING DEVICE'

Simplified Explanation

The abstract describes a type of chalcogenide material that contains specific elements such as germanium, arsenic, sulfur, selenium, and a group III metal (indium, gallium, or aluminum). The material has specific composition ranges for each element, such as the content of germanium being between 10% and 30%, the content of arsenic being between 30% and 50%, the content of selenium being between 20% and 60%, the content of sulfur being between 0.5% and 10%, and the content of the group III metal being between 0.5% and 10%.


Original Abstract Submitted

A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.

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