BUFFER EPITAXIAL REGION IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME: abstract simplified (18163649)

• This abstract for appeared for patent application number 18163649 Titled 'BUFFER EPITAXIAL REGION IN SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD OF THE SAME'

Simplified Explanation

The abstract describes a method for creating a semiconductor structure on a substrate. The method involves forming a fin-shaped structure on the substrate, with different layers of materials. A dummy gate structure is then placed on top of the fin, and part of the fin is removed to create a recess. A buffer semiconductor region is grown in the recess, followed by the growth of a source/drain feature. Finally, the dummy gate structure is replaced with a metal gate structure. The buffer semiconductor region has a specific crystal plane orientation.

Original Abstract Submitted

A method includes forming a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin has an epitaxial portion and a mesa portion under the epitaxial portion. The epitaxial portion has a plurality of channel layers interleaved with a plurality of sacrificial layers. The semiconductor substrate has a top surface in (110) crystal plane. The method also includes forming a dummy gate structure across the semiconductor fin, removing at least the epitaxial portion of the semiconductor fin in a region adjacent the dummy gate structure to form a recess, epitaxially growing a buffer semiconductor region in the recess, epitaxially growing a source/drain feature on the buffer semiconductor region, and replacing the dummy gate structure with a metal gate structure. The buffer semiconductor region has a top surface in (110) crystal plane.