|
|
| (6 intermediate revisions by the same user not shown) |
| Line 1: |
Line 1: |
| | + | '''Summary of the patent applications from Applied Materials, Inc. on October 5th, 2023''' |
| | + | |
| | + | * Applied Materials, Inc. has recently filed patents related to various technologies and methods in the field of semiconductor processing and device manufacturing. |
| | + | * These patents include methods and devices for creating uniform layers on a substrate for piezoelectric applications, an organic light-emitting diode (OLED) deposition system, technology related to electroluminescent devices and displays, manufacturing a dielectric barrier discharge (DBD) structure, a type of transistor with a vertical drift region, methods of semiconductor processing to increase corrosion resistance, assemblies and systems for monitoring substrate characteristics, techniques for selective deposition of materials on metallic surfaces, a method and system for calibrating temperature-based measurements in a manufacturing system, and a link chamber used in multi-chamber processing tools or systems. |
| | + | * Notable applications of these patents include: |
| | + | * Improved quality and properties of piezoelectric materials through uniform layer deposition. |
| | + | * Efficient deposition of organic material layers onto a workpiece in a vacuum environment. |
| | + | * Enhanced performance and refractive index control in electroluminescent devices and displays. |
| | + | * Creation of a DBD structure with patterned electrode layers for various applications. |
| | + | * Transistors with vertical drift regions for improved performance and functionality. |
| | + | * Methods to increase corrosion resistance of metal substrates in semiconductor processing. |
| | + | * Monitoring and control of substrate characteristics during processing. |
| | + | * Selective deposition of materials on metallic surfaces using metal-carbonyl compounds. |
| | + | * Calibration of temperature-based measurements in manufacturing systems for accurate process control. |
| | + | * Link chambers for seamless substrate transfer in multi-chamber processing tools or systems. |
| | + | |
| | + | |
| | + | |
| | + | |
| | ==Patent applications for Applied Materials, Inc. on October 5th, 2023== | | ==Patent applications for Applied Materials, Inc. on October 5th, 2023== |
| | | | |
| Line 5: |
Line 24: |
| | '''Inventor''' | | '''Inventor''' |
| | Arvinder Chadha | | Arvinder Chadha |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a puck used in an electrostatic chuck. The puck has a substrate with a top and bottom surface. The top surface is made of a first material composition, while the bottom surface is made of a second material composition. The substrate also has a composition gradient between the top and bottom surfaces.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments disclosed herein include a puck for an electrostatic chuck. In an embodiment, the puck comprises a substrate with a top surface and a bottom surface. In an embodiment, a first material composition is at the top surface of the substrate, and a second material composition is at the bottom surface of the substrate. In an embodiment, a composition gradient is provided through the substrate between the top surface and the bottom surface.
| |
| | | | |
| | ===ELECTROMAGNET PULSING EFFECT ON PVD STEP COVERAGE (17737361)=== | | ===ELECTROMAGNET PULSING EFFECT ON PVD STEP COVERAGE (17737361)=== |
| Line 16: |
Line 29: |
| | '''Inventor''' | | '''Inventor''' |
| | Kevin KASHEFI | | Kevin KASHEFI |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes methods and equipment for processing a substrate using physical vapor deposition. It mentions a processing chamber with a substrate support surface, a power supply for sputtering material onto the substrate, and an electromagnet that creates electromagnetic field lines to direct the sputtered material. The controller is responsible for controlling the electromagnet based on a recipe, specifically a pulsing schedule, to control the direction of ions relative to a feature on the substrate.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Methods and apparatus for processing a substrate are provided herein. For example, a physical vapor deposition processing chamber comprises a chamber body defining a processing volume, a substrate support disposed within the processing volume and comprising a substrate support surface configured to support a substrate, a power supply configured to energize a target for sputtering material toward the substrate, an electromagnet operably coupled to the chamber body and positioned to form electromagnetic filed lines through a sheath above the substrate during sputtering for directing sputtered material toward the substrate, and a controller operably coupled to the physical vapor deposition processing chamber for controlling the electromagnet based on a recipe comprising a pulsing schedule for pulsing the electromagnet during operation to control directionality of ions relative to a feature on the substrate.
| |
| | | | |
| | ===GAS INJECTION FOR DE-AGGLOMERATION IN PARTICLE COATING REACTOR (18205273)=== | | ===GAS INJECTION FOR DE-AGGLOMERATION IN PARTICLE COATING REACTOR (18205273)=== |
| Line 27: |
Line 34: |
| | '''Inventor''' | | '''Inventor''' |
| | Jonathan Frankel | | Jonathan Frankel |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method for coating particles in a vacuum chamber. The particles are dispensed into the chamber and form a half-cylinder bed. The chamber is then evacuated, and a paddle assembly is used to stir the particles in the bed. As the paddle assembly rotates, a reactant or precursor gas is injected into the chamber through channels to coat the particles. The gas is injected at a high velocity to de-agglomerate the particles in the bed.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method of coating particles includes dispensing particles into a vacuum chamber to form a particle bed in at least a lower portion of the chamber that forms a half-cylinder, evacuating the chamber through a vacuum port in an upper portion of the chamber, rotating a paddle assembly such that a plurality of paddles orbit a drive shaft to stir the particles in the particle bed, injecting a reactant or precursor gas through a plurality of channels into the lower portion of the chamber as the paddle assembly rotates to coat the particles, and injecting the reactant or precursor gas or a purge gas through the plurality of channels at a sufficiently high velocity such that the reactant or precursor a purge gas de-agglomerates particles in the particle bed.
| |
| | | | |
| | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855031)=== | | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855031)=== |
| Line 38: |
Line 39: |
| | '''Inventor''' | | '''Inventor''' |
| | Srikanth Krishnamurthy | | Srikanth Krishnamurthy |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a sensor assembly that includes a housing with two channels for gas flow. The housing can be connected to a gas flow assembly. Inside the housing, there is a substrate with different regions, including an outer region, an inner region within one of the channels, and a middle region between them. The substrate also has electrical contact pads on the inner region. A sensor die is attached to the inner region of the substrate and has electrical connections to the contact pads. The sensor die is placed within the gas flow path of one of the channels.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Certain embodiments of the present disclosure relate to a sensor assembly including a housing having a first channel configured to flow a gas in a first direction and a second channel configured to flow the gas in a second direction. The housing is configured to couple to a gas flow assembly. A substrate is disposed within the housing. The substrate has an outer region, an inner region within the first channel, and a middle region between the outer region and the inner region. The substrate further includes electrical contact pads on at least the inner region. A sensor die is coupled to the inner region of the substrate, having an electrical connection to the electrical contact pads. The sensor die is disposed within a gas flow path of the first channel.
| |
| | | | |
| | ===METHODS OF PREVENTING METAL CONTAMINATION BY CERAMIC HEATER (17709931)=== | | ===METHODS OF PREVENTING METAL CONTAMINATION BY CERAMIC HEATER (17709931)=== |
| Line 49: |
Line 44: |
| | '''Inventor''' | | '''Inventor''' |
| | Yongjing Lin | | Yongjing Lin |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes substrate support systems used in process chambers. The substrate support is made of a thermally conductive material and has a top surface, bottom surface, and outer edge. It also has long edge purge channels at the outer edge. The substrate support is designed to hold a substrate for processing. The top surface of the support may have a ceramic coating. The purge channels are connected to long edge purge channels, which are coated with a special coating. The substrate support assembly includes the support post. The processing chamber consists of a chamber body and the substrate support inside it.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.
| |
| | | | |
| | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709304)=== | | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709304)=== |
| Line 60: |
Line 49: |
| | '''Inventor''' | | '''Inventor''' |
| | Albert Barrett Hicks, III | | Albert Barrett Hicks, III |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This method involves receiving data about a film on a substrate's surface that has been processed within a sensor assembly in a processing chamber. The data helps determine the rate at which the film is advancing across the substrate's surface. Based on this rate, the dosage strength of a reactive substance delivered to the processing region is determined. This dosage strength can be displayed on a graphical user interface and used to adjust the operation of the processing chamber.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method including receiving, by a processing device, first data characterizing a film on a surface of a substrate processed within a recess of a sensor assembly positioned in a first region of a processing chamber. The processed surface of the film corresponds to a substrate processing procedure. The method further includes determining, based on the first data, a rate of advancement of a first processed surface boundary of the film across the surface of the substrate. The method further includes determining, using the rate of advancement, a dosage strength of a reactive species delivered to the first region of the processing. The method may further include preparing an indication of the dosage strength for presentation on a graphical user interface (GUI). The method may further include altering an operation of the processing chamber based on the dosage strength.
| |
| | | | |
| | ===METHODS FOR DEPOSITING SACRIFICIAL COATINGS ON AEROSPACE COMPONENTS (18200497)=== | | ===METHODS FOR DEPOSITING SACRIFICIAL COATINGS ON AEROSPACE COMPONENTS (18200497)=== |
| Line 71: |
Line 54: |
| | '''Inventor''' | | '''Inventor''' |
| | Sukti CHATTERJEE | | Sukti CHATTERJEE |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a protective coating for aerospace components and a method for applying the coating. The coating consists of a nickel superalloy body, a metal oxide template layer, and an aluminum oxide layer. The metal oxide template layer contains chromium oxide or chromium oxide hydroxide, while the aluminum oxide layer contains α-AlO. Both layers have a corundum crystal structure and a lattice mismatch of about 0.1% to 10%.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments of the present disclosure generally relate to protective coatings on aerospace components and methods for depositing the protective coatings. In one or more embodiments, an aerospace component has a body containing a nickel superalloy, a metal oxide template layer disposed on the body, and an aluminum oxide layer disposed between the body of the aerospace component and the metal oxide template layer. The metal oxide template layer contains chromium oxide, chromium oxide hydroxide, or a combination thereof. The aluminum oxide layer contains α-AlO. The metal oxide template layer and the aluminum oxide layer have a corundum crystal structure and have crystal structures with a lattice mismatch of about 0.1% to about 10%.
| |
| | | | |
| | ===ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS (18129999)=== | | ===ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS (18129999)=== |
| Line 82: |
Line 59: |
| | '''Inventor''' | | '''Inventor''' |
| | Paul R. McHugh | | Paul R. McHugh |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a technology related to electroplating methods. The method involves using an electrochemical cell with multiple compartments separated by membranes. A first portion of an electrolyte feedstock, containing metal ions and acid, is provided to the first compartment. A second portion of the electrolyte feedstock is provided to the second compartment. An acidic solution is provided to a third compartment. A current is applied to an anode, which is located near the first compartment and across from the first membrane.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments of the present technology include electroplating methods that include providing a first portion of an electrolyte feedstock to a first compartment of an electrochemical cell. The first portion of an electrolyte feedstock may be characterized by an initial metal ion concentration and an initial acid concentration. The methods may include providing a second portion of an electrolyte feedstock to a second compartment of the electrochemical cell. The second compartment and first compartment may be separated by a first membrane. The methods may include providing an acidic solution to a third compartment of the electrochemical cell. The third compartment and second compartment may be separated by a second membrane. The acidic solution may be characterized by an initial acid concentration. The methods may include applying a current to an anode of the electrochemical cell. The anode of the electrochemical cell may be disposed proximate the first compartment and across from the first membrane.
| |
| | | | |
| | ===ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS (18130004)=== | | ===ELECTROPLATING SYSTEMS AND METHODS WITH INCREASED METAL ION CONCENTRATIONS (18130004)=== |
| Line 93: |
Line 64: |
| | '''Inventor''' | | '''Inventor''' |
| | Paul R. McHugh | | Paul R. McHugh |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method for electroplating copper using an electrochemical cell. The method involves separating the cell into two compartments using a membrane. Copper is provided to one compartment, while an acidic solution is provided to the other compartment. A current is applied to an anode, which is located near the copper compartment and across from the membrane. This process results in the formation of an anolyte and catholyte precursor.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Electroplating methods may include providing an electrolyte feedstock comprising copper to a first compartment of an electrochemical cell. The methods may include providing an acidic solution to a second compartment of the electrochemical cell. The first compartment and second compartment may be separated by a membrane. The methods may include applying a current to an anode of the electrochemical cell. The anode of the electrochemical cell may be disposed proximate the first compartment and across from the membrane. The methods may include forming an anolyte and catholyte precursor.
| |
| | | | |
| | ===METHODS FOR HIGH-RESOLUTION, STABLE MEASUREMENT OF PITCH AND ORIENTATION IN OPTICAL GRATINGS (18118269)=== | | ===METHODS FOR HIGH-RESOLUTION, STABLE MEASUREMENT OF PITCH AND ORIENTATION IN OPTICAL GRATINGS (18118269)=== |
| Line 104: |
Line 69: |
| | '''Inventor''' | | '''Inventor''' |
| | Yangyang SUN | | Yangyang SUN |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a measurement system that uses an aperture filtering component to filter out unwanted reflections and diffraction from a non-opaque substrate. The system includes a measurement arm that projects a light beam onto the top surface of an optical device structure. The reflections and diffraction from other surfaces of the substrate cause interference, but the aperture filtering component filters out these unwanted beams, allowing only the images of the light beam to be detected.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments described herein provide for a measurement system having an aperture filtering component and methods of utilizing the measurement system. The measurement system described herein includes a measurement arm and a stage. The measurement arm projects a light beam to a top surface of an optical device structure. Multi-reflection beams resulting from reflections and diffraction off other surfaces of a non-opaque substrate leads to interference. The measurement arm includes an aperture (e.g., an aperture filtering component) that filters the multi-reflection beams from being relayed to the detector. As such, only images of the light beam are relayed to the detector.
| |
| | | | |
| | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855019)=== | | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855019)=== |
| Line 115: |
Line 74: |
| | '''Inventor''' | | '''Inventor''' |
| | Vijay Parkhe | | Vijay Parkhe |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a sensor assembly that includes a substrate with different regions and electrical contact pads. The assembly also includes a housing for sealing and a sensor die bonded to the substrate. The sensor die is connected to the electrical contact pads through a metal bond that may contain platinum, tin, indium, copper, aluminum, and/or nickel.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Certain embodiments of the present disclosure relate to a sensor assembly including a substrate having an outer region, an inner region, and a middle region between the outer region and the inner region. The substrate further includes electrical contact pads on at least the inner region. The sensor assembly further includes a housing coupled to the substrate at the middle region or the outer region to provide a hermetic seal. The sensor assembly further includes a sensor die bonded to the substrate at the inner region. A metal bond bonds electrodes of the sensor die to the electrical contact pads. The metal bond includes platinum, and/or one or more metals selected from tin, indium, copper, aluminum, and/or nickel.
| |
| | | | |
| | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855013)=== | | ===PACKAGING FOR A SENSOR AND METHODS OF MANUFACTURING THEREOF (17855013)=== |
| Line 126: |
Line 79: |
| | '''Inventor''' | | '''Inventor''' |
| | Arvinder Manmohan Singh Chadha | | Arvinder Manmohan Singh Chadha |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a sensor assembly that includes a substrate, a housing, and a sensor die. The substrate has different regions - an outer region, an inner region, and a middle region. The substrate also has electrical contact pads on the inner region. The housing is connected to the substrate at either the middle or outer region to create a hermetic seal. The sensor die is connected to the substrate at the inner region using the electrical contact pads. The sensor die is aligned with the substrate using aligning features in either a first or second plane.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Certain embodiments of the present disclosure relate to a sensor assembly including a substrate, a housing, and a sensor die. In certain embodiments, the substrate includes an outer region, an inner region, and a middle region between the outer region and the inner region. In certain embodiments, the substrate includes electrical contact pads on at least the inner region. In certain embodiments, the housing is coupled to the substrate at the middle region or the outer region to provide a hermetic seal. In certain embodiments, the sensor die is coupled to the substrate at the inner region via the electrical contact pads. The sensor die is aligned to the substrate via aligning features that align the sensor die relative to the substrate in at least one of a first plane or a second plane.
| |
| | | | |
| | ===LEAK DETECTION FOR GAS STICKS (18190418)=== | | ===LEAK DETECTION FOR GAS STICKS (18190418)=== |
| Line 137: |
Line 84: |
| | '''Inventor''' | | '''Inventor''' |
| | Yen-Kun Wang | | Yen-Kun Wang |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method and system for monitoring and detecting gas leaks in a gas stick assembly. The method involves measuring the pressure in the mass flow controller of the assembly at different time points. It then determines if there is a significant difference in pressure between these time points, exceeding a predetermined threshold. This approach helps identify potential gas leaks in the system.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method and system for monitoring and detecting a gas leak in a gas stick assembly is provided. The method includes measuring the pressure in the mass flow controller of the gas stick assembly at different time points and determining whether there is a difference in the pressure at the different time points that exceeds a difference threshold.
| |
| | | | |
| | ===METHODS TO IMPROVE PROCESS WINDOW AND RESOLUTION FOR DIGITAL LITHOGRAPHY WITH AUXILIARY FEATURES (18006259)=== | | ===METHODS TO IMPROVE PROCESS WINDOW AND RESOLUTION FOR DIGITAL LITHOGRAPHY WITH AUXILIARY FEATURES (18006259)=== |
| Line 148: |
Line 89: |
| | '''Inventor''' | | '''Inventor''' |
| | Chi-Ming TSAI | | Chi-Ming TSAI |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes methods for printing features using lithography. These methods involve determining a mask pattern that includes auxiliary features, which are added to main features in a lithography process. The determination of these auxiliary features can be done using a rule-based process flow or a lithography model process flow.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments described herein relate to methods of printing features within a lithography environment. The methods include determining a mask pattern. The mask pattern includes auxiliary features to be provided with main features to a maskless lithography device in a lithography process. The auxiliary features are determined with a rule-based process flow or a lithography model process flow.
| |
| | | | |
| | ===USING DEEP REINFORCEMENT LEARNING FOR TIME CONSTRAINT MANAGEMENT AT A MANUFACTURING SYSTEM (18130491)=== | | ===USING DEEP REINFORCEMENT LEARNING FOR TIME CONSTRAINT MANAGEMENT AT A MANUFACTURING SYSTEM (18130491)=== |
| Line 159: |
Line 94: |
| | '''Inventor''' | | '''Inventor''' |
| | Harel Yedidsion | | Harel Yedidsion |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method for training an agent in a substrate manufacturing system. The agent is initialized to select actions in a simulation environment for the manufacturing system. The simulation is paused to obtain output data based on the current state of the environment. The agent is then updated using this data to make decisions about when to start processing different substates in the manufacturing system.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method for training an agent for a substrate manufacturing system is provided. The method includes initializing an agent of a predictive subsystem of a substrate manufacturing system to select an action to perform in a simulation environment associated with the substrate manufacturing system and initiating a simulation of the selected action in the simulation environment. In response to pausing the simulation, the method further includes obtaining, based on an environment state associated with the simulation, output data and updating the agent, based on the output data, to be configured to generate one or more dispatching decisions indicative of a time to initiate processing of one or more substates in the substrate manufacturing system.
| |
| | | | |
| | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709303)=== | | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709303)=== |
| Line 170: |
Line 99: |
| | '''Inventor''' | | '''Inventor''' |
| | Albert Barrett Hicks, III | | Albert Barrett Hicks, III |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method for analyzing image data of a film on a substrate. The image data captures the reflection of light from the film and includes information about the camera angle. Using this data, a processing device determines the reflection effect of the light and processes it using machine-learning models. The method also calculates process result metrics for different locations on the film. These metrics can be displayed on a graphical user interface or processed in a script-based environment.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method including receiving, by a processing device, image data characterizing light reflected from of a film disposed on a processed surface of a substrate. The image data corresponds to one or more locations across a surface of the film and indicates a camera perspective angle associated with capturing the image data. The method further includes determining, by the processing device using the image data, reflection data indicating reflection effect of the light reflected from the film. The method further includes processing the reflection data using one or more machine-learning model (MLMs). The method further includes determining one or more process result metrics of the film corresponding to the one or more locations. The method may further includes preparing the one or more process result metrics for display on a graphical user interface (GUI). The method may further include preparing the one or more process result metrics for processing in a script-based environment.
| |
| | | | |
| | ===TRAINING A MACHINE LEARNING SYSTEM TO DETECT AN EXCURSION OF A CMP COMPONENT USING TIME-BASED SEQUENCE OF IMAGES (18206353)=== | | ===TRAINING A MACHINE LEARNING SYSTEM TO DETECT AN EXCURSION OF A CMP COMPONENT USING TIME-BASED SEQUENCE OF IMAGES (18206353)=== |
| Line 181: |
Line 104: |
| | '''Inventor''' | | '''Inventor''' |
| | Sidney P. Huey | | Sidney P. Huey |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method for monitoring the operations of a polishing system. It involves capturing a series of reference images of a component of the system during a test operation. Then, a camera captures a series of monitoring images of an equivalent component of a different polishing system while it polishes a substrate. By comparing the reference images to the monitoring images using an image processing algorithm, a difference value is determined. If this difference value exceeds a certain threshold, an excursion is indicated.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Monitoring operations of a polishing system includes obtaining a time-based sequence of reference images of a component of the polishing system performing operations during a test operation of the polishing system, receiving from a camera a time-based sequence of monitoring images of an equivalent component of an equivalent polishing system performing operations during polishing of a substrate, determining a difference value for the time-based sequence of monitoring images by comparing the time-based sequence of reference images to the time-based sequence of monitoring image using an image processing algorithm, determining whether the difference value exceeds a threshold, and in response to determining the difference value exceeds the threshold, indicating an excursion.
| |
| | | | |
| | ===GENERATING SYNTHETIC MICROSPY IMAGES OF MANUFACTURED DEVICES (17710728)=== | | ===GENERATING SYNTHETIC MICROSPY IMAGES OF MANUFACTURED DEVICES (17710728)=== |
| Line 192: |
Line 109: |
| | '''Inventor''' | | '''Inventor''' |
| | Abhinav Kumar | | Abhinav Kumar |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method that involves using machine learning to generate synthetic microscopy images of a manufactured device. The method starts by receiving data about the dimensions of the device and then feeding this data into a trained machine learning model. The model then generates a synthetic microscopy image of the device based on the provided data. The method can either display the synthetic image on a screen or perform various operations on it.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method includes receiving data indicating a plurality of dimensions of a manufactured device. The method further includes providing the data to a trained machine learning model. The method further includes receiving, from the trained machine learning model, a synthetic microscopy image associated with the manufactured device, wherein the synthetic microscopy image is generated in view of the first data. The method further includes performing at least one of (i) outputting the synthetic microscopy image to a display or (ii) performing one or more operations on the synthetic microscopy image.
| |
| | | | |
| | ===RADIO FREQUENCY SOURCE FOR INDUCTIVELY COUPLED AND CAPACITIVELY COUPLED PLASMAS IN SUBSTRATE PROCESSING CHAMBERS (17693409)=== | | ===RADIO FREQUENCY SOURCE FOR INDUCTIVELY COUPLED AND CAPACITIVELY COUPLED PLASMAS IN SUBSTRATE PROCESSING CHAMBERS (17693409)=== |
| Line 203: |
Line 114: |
| | '''Inventor''' | | '''Inventor''' |
| | Abdul Aziz Khaja | | Abdul Aziz Khaja |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method of using a radio frequency (RF) source to generate a plasma in a plasma processing chamber. The plasma is used to perform various processes on a substrate, such as etching or deposition. The RF source is controlled to route the RF signal to electrodes in the chamber to generate the plasma during these processes. After the processes are complete, the same RF source is used to generate a second RF signal, which is routed to inductive coils. These coils generate an inductively coupled plasma, which is used for a cleaning process to remove film deposits on the interior of the chamber.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A radio frequency (RF) source may be used to generate a capacitively coupled plasma to perform a plasma-based process on a substrate in a plasma processing chamber. A controller may cause the RF source and a switching element to route an RF signal to electrodes in the pedestal that generate the plasma in the processing chamber as part of a recipe performed on a substrate during etch or deposition processes. Between processes, the controller may cause the same RF source to generate a second RF signal that is instead routed by the switching element to inductive coils to generate an inductively coupled plasma for a cleaning process to remove film deposits on the interior of the plasma processing chamber.
| |
| | | | |
| | ===PLASMA SHOWERHEAD WITH IMPROVED UNIFORMITY (17712046)=== | | ===PLASMA SHOWERHEAD WITH IMPROVED UNIFORMITY (17712046)=== |
| Line 214: |
Line 119: |
| | '''Inventor''' | | '''Inventor''' |
| | Chaowei Wang | | Chaowei Wang |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes the invention of plasma showerheads that have been improved to provide more uniform distribution of gas. The showerheads have gas nozzles that are angled in a specific way, either vertically or directionally. Importantly, the gas channels and nozzles do not intersect with the plasma regions of the showerhead.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Plasma showerheads with improved gas uniformity are disclosed. One or more embodiment of the disclosure provides a plasma showerhead with angled gas nozzles. Some embodiments of the disclosure have gas nozzles angled by a vertical offset angle and/or a directional offset angle. None of the gas channels and/or the gas nozzles intersect with the plasma regions of the showerhead.
| |
| | | | |
| | ===ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS (18206514)=== | | ===ULTRA-HIGH MODULUS AND ETCH SELECTIVITY BORON-CARBON HARDMASK FILMS (18206514)=== |
| Line 225: |
Line 124: |
| | '''Inventor''' | | '''Inventor''' |
| | Prashant Kumar KULSHRESHTHA | | Prashant Kumar KULSHRESHTHA |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method for depositing boron-carbon films on a substrate in the fabrication of integrated circuits. The method involves flowing a mixture of hydrocarbon-containing gas and boron-containing gas into a processing chamber where a substrate is heated to a specific temperature. An RF plasma is then generated in the chamber to deposit a boron-carbon film on the substrate. The resulting film has specific properties, including an elastic modulus of 200-400 GPa and a stress range of -100 to 100 MPa.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about −100 MPa to about 100 MPa.
| |
| | | | |
| | ===GAP FILL ENHANCEMENT WITH THERMAL ETCH (17887292)=== | | ===GAP FILL ENHANCEMENT WITH THERMAL ETCH (17887292)=== |
| Line 236: |
Line 129: |
| | '''Inventor''' | | '''Inventor''' |
| | Kai WU | | Kai WU |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method for creating a connection structure on a substrate. This involves applying a nucleation layer to the substrate's surface, which has multiple openings. The nucleation layer is formed by exposing the substrate to a gas containing tungsten, which creates a layer of tungsten over the surface of each opening. This tungsten layer is then exposed to an etchant gas, which removes some of the tungsten from the top region of each opening. This process is repeated multiple times. Finally, a bulk layer is applied over the nucleation layer.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.
| |
| | | | |
| | ===METHODS, SYSTEMS, AND APPARATUS FOR PROCESSING SUBSTRATES USING ONE OR MORE AMORPHOUS CARBON HARDMASK LAYERS (18206037)=== | | ===METHODS, SYSTEMS, AND APPARATUS FOR PROCESSING SUBSTRATES USING ONE OR MORE AMORPHOUS CARBON HARDMASK LAYERS (18206037)=== |
| Line 247: |
Line 134: |
| | '''Inventor''' | | '''Inventor''' |
| | Krishna NITTALA | | Krishna NITTALA |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes methods, systems, and apparatus for processing substrates using amorphous carbon hardmask layers. The focus is on altering film stress and improving etch selectivity. The process involves depositing the hardmask layers onto the substrate and then subjecting it to a rapid thermal anneal operation, which lasts for a maximum of 60 seconds. The substrate is heated to an anneal temperature between 600 and 1,000 degrees Celsius. After the anneal operation, the substrate is etched.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.
| |
| | | | |
| | ===MODULAR MULTI-CHAMBER PROCESSING TOOL HAVING LINK CHAMBER FOR ULTRA HIGH VACCUM PROCESSES (17692969)=== | | ===MODULAR MULTI-CHAMBER PROCESSING TOOL HAVING LINK CHAMBER FOR ULTRA HIGH VACCUM PROCESSES (17692969)=== |
| Line 258: |
Line 139: |
| | '''Inventor''' | | '''Inventor''' |
| | Robert Irwin DECOTTIGNIES | | Robert Irwin DECOTTIGNIES |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a link chamber used in multi-chamber processing tools or systems. The link chamber has a body with multiple facets, a bottom plate, and a top plate. At least seven of the facets have an opening, forming several chamber openings. These openings are designed to allow a substrate to pass through. Each of the chamber openings can be connected to a slit valve, a load lock chamber, a cover plate, a process chamber, or another link chamber body.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments of link chamber for use in multi-chamber processing tools or systems are provided herein. In some embodiments, a link chamber for use in a multi-chamber processing tool includes: a link chamber body having a plurality of facets extending between a bottom plate and a top plate, wherein at least seven of the plurality of facets have a chamber opening to form a plurality of chamber openings, wherein the plurality of chamber openings are sized to pass a substrate therethrough, and wherein each of the plurality of chamber openings are configured to be coupled to a slit valve, a load lock chamber, a cover plate, a process chamber, or a second link chamber body.
| |
| | | | |
| | ===TEMPERATURE-BASED METROLOGY CALIBRATION AT A MANUFACTURING SYSTEM (17710779)=== | | ===TEMPERATURE-BASED METROLOGY CALIBRATION AT A MANUFACTURING SYSTEM (17710779)=== |
| Line 269: |
Line 144: |
| | '''Inventor''' | | '''Inventor''' |
| | Shifang Li | | Shifang Li |
| − |
| |
| − | '''Brief explanation'''
| |
| − | This abstract describes a method and system for calibrating temperature-based measurements in a manufacturing system. The system obtains data on the temperature of a substrate after certain stages of the manufacturing process. It then determines the temperature of the substrate after the completion of the entire process using calibration data. If certain criteria are met based on this temperature data, the system modifies the recipe for the substrate process.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Methods and systems for temperature-based metrology calibration at a manufacturing system are provided. First metrology data corresponding to one or more first temperatures associated with a substrate following a completion of one or more portions of a substrate process at a manufacturing system is obtained. Second metrology data corresponding to a second temperature associated with the substrate following the completion of the substrate process is determined in view of calibration data associated with the substrate. The second temperature is different from each of the one or more first temperatures. In response to a determination, in view of the second metrology data, that a modification criterion associated with the substrate process is satisfied, the substrate process recipe is modified.
| |
| | | | |
| | ===Metal Surface Blocking Molecules for Selective Deposition (17864552)=== | | ===Metal Surface Blocking Molecules for Selective Deposition (17864552)=== |
| Line 280: |
Line 149: |
| | '''Inventor''' | | '''Inventor''' |
| | Muthukumar Kaliappan | | Muthukumar Kaliappan |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes techniques for depositing materials onto metallic surfaces in a selective manner. These methods involve using a precursor that contains metal-carbonyl compounds to create a self-assembled monolayer on the metallic surface.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a metal-carbonyl containing precursor to form a self-assembled monolayer (SAM) on metallic surfaces.
| |
| | | | |
| | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709301)=== | | ===CHEMICAL-DOSE SUBSTRATE DEPOSITION MONITORING (17709301)=== |
| Line 291: |
Line 154: |
| | '''Inventor''' | | '''Inventor''' |
| | Albert Barrett Hicks, III | | Albert Barrett Hicks, III |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes assemblies, systems, methods, and devices used for monitoring the characteristics of a substrate that is placed in a recess within a processing chamber. The assembly includes an enclosure structure that has an interior volume where the substrate is placed. The substrate can be taken out of the enclosure structure if needed. The enclosure structure has an upper interior surface and a lower interior surface. The interior volume is designed to direct a reactive substance to one surface of the substrate for a specific process. The lower interior surface has two parts - one part supports the substrate, and the other part forms a channel that allows the reactive substance to reach the opposite surface of the substrate.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Assemblies, system, methods, and devices for monitoring characteristics of a substrate disposed in a recess within a processing chamber. An assembly includes an enclosure structure forming an interior volume configured to support a substrate disposed within the interior volume. The substrate may be selectively removed from the enclosure structure. The enclosure structure may include an upper interior surface and a lower interior surface located below the upper interior surface. The interior volume is configured to direct a first mass transport of a reactive species to a first surface of the substrate, the reactive species corresponding to a substrate process. A first portion of the lower interior surface is configured to support the substrate. A second portion of the lower interior surface forms a channel configured to provide a second mass transport of the reactive species to a second surface of the substrate opposite the first surface.
| |
| | | | |
| | ===COATINGS WITH DIFFUSION BARRIERS FOR CORROSION AND CONTAMINATION PROTECTION (17713350)=== | | ===COATINGS WITH DIFFUSION BARRIERS FOR CORROSION AND CONTAMINATION PROTECTION (17713350)=== |
| Line 302: |
Line 159: |
| | '''Inventor''' | | '''Inventor''' |
| | Jordi Perez Mariano | | Jordi Perez Mariano |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes methods of semiconductor processing that aim to increase the corrosion resistance of a metal substrate. These methods involve the formation of different oxygen-containing materials on the substrate, such as silicon oxide, yttrium oxide, or aluminum oxide. A barrier layer is also formed on top of the first oxygen-containing material, followed by the formation of a second oxygen-containing material. These methods can help protect the substrate from corrosion.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Exemplary methods of semiconductor processing are described. The methods are developed to increase corrosion resistance to a substrate, such as a metal substrate. The methods include forming a first oxygen-containing material on a substrate. The first oxygen-containing material may be or include silicon oxide, yttrium oxide, or aluminum oxide. The methods may include forming a barrier layer on the first oxygen-containing material. The methods may include forming a second oxygen-containing material on the barrier layer. The second oxygen-containing material may be or include silicon oxide, yttrium oxide, or aluminum oxide.
| |
| | | | |
| | ===STRUCTURE AND FABRICATION METHOD OF HIGH VOLTAGE MOSFET WITH A VERTICAL DRIFT REGION (17714093)=== | | ===STRUCTURE AND FABRICATION METHOD OF HIGH VOLTAGE MOSFET WITH A VERTICAL DRIFT REGION (17714093)=== |
| Line 313: |
Line 164: |
| | '''Inventor''' | | '''Inventor''' |
| | Changseok KANG | | Changseok KANG |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a type of transistor that has a vertical drift region. The transistor includes a well region, a gate region, and a drift region. The well region is of a certain type of conductivity, while the drift region is of a different type of conductivity. The drift region has a lateral portion that is positioned above part of the well region and is adjacent to a semiconductor channel in the well region. Additionally, the drift region has a vertical portion that extends vertically from the lateral portion.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments of the present disclosure include a transistor with a vertical drift region and methods for forming the transistor. The transistor may include a well region of a first conductivity type, a gate region disposed above the well region, and a drift region of a second conductivity type, different from the first conductivity type. The drift region may have a lateral portion disposed above a portion of the well region and laterally adjacent to a semiconductor channel in the well region. The drift region may also have a vertical portion extending vertically from the lateral portion of the drift region.
| |
| | | | |
| | ===METHODS OF MANUFACTURING PLASMA GENERATING CELLS FOR A PLASMA SOURCE (17853584)=== | | ===METHODS OF MANUFACTURING PLASMA GENERATING CELLS FOR A PLASMA SOURCE (17853584)=== |
| Line 324: |
Line 169: |
| | '''Inventor''' | | '''Inventor''' |
| | David John Jorgensen | | David John Jorgensen |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a method for manufacturing a dielectric barrier discharge (DBD) structure. This involves creating a patterned electrode layer on a substrate made of a dielectric material. The patterned electrode layer consists of multiple electrodes arranged around the outer edge of the substrate, with gaps between them. A dielectric layer is then deposited over at least a portion of the patterned electrode layer to create a DBD region within the structure.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | A method of manufacturing a dielectric barrier discharge (DBD) structure includes forming a patterned electrode layer around an outer perimeter of a substrate composed of a dielectric material. The patterned electrode layer includes multiple electrodes around the outer perimeter of the substrate and gaps between adjacent electrodes. The method further includes depositing a dielectric layer over at least a first region of the patterned electrode layer to form a DBD region of the DBD structure.
| |
| | | | |
| | ===ORGANIC ELECTROLUMINESCENT DEVICES WITH IMPROVED OPTICAL OUT-COUPLING EFFICIENCIES (18021856)=== | | ===ORGANIC ELECTROLUMINESCENT DEVICES WITH IMPROVED OPTICAL OUT-COUPLING EFFICIENCIES (18021856)=== |
| Line 335: |
Line 174: |
| | '''Inventor''' | | '''Inventor''' |
| | Chung-chia CHEN | | Chung-chia CHEN |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes a technology related to electroluminescent devices, specifically organic light-emitting diodes (OLEDs), and displays that use these devices. One embodiment of the technology involves an electroluminescent device that includes different layers, such as a pixel defining layer, an organic emitting unit, and a filler layer. The refractive index of the pixel defining layer is lower than that of the filler layer and also lower than the refractive index of certain layers in the organic emitting unit. Another embodiment describes a display device that includes a substrate, a thin film transistor, an interconnection, and an electroluminescent device. The electroluminescent device is electrically connected to the interconnection.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Embodiments of the present disclosure generally relate to electroluminescent devices, such as organic light-emitting diodes, and displays including electroluminescent devices. In an embodiment is provided an electroluminescent device that includes a pixel defining layer, an organic emitting unit disposed over at least a portion of the pixel defining layer, and a filler layer disposed over at least a portion of the organic emitting unit, wherein a refractive index of the pixel defining layer is lower than a refractive index of the filler layer, and wherein the refractive index of the pixel defining layer is lower than a refractive index of one or more layers of the organic emitting unit. In another embodiment is provided a display device that includes a substrate, a thin film transistor formed on the substrate, an interconnection electrically coupled to the thin film transistor, and an electroluminescent device electrically coupled to the interconnection.
| |
| | | | |
| | ===IN-LINE MONITORING OF OLED LAYER THICKNESS AND DOPANT CONCENTRATION (18207549)=== | | ===IN-LINE MONITORING OF OLED LAYER THICKNESS AND DOPANT CONCENTRATION (18207549)=== |
| Line 346: |
Line 179: |
| | '''Inventor''' | | '''Inventor''' |
| | Yeishin Tung | | Yeishin Tung |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes an organic light-emitting diode (OLED) deposition system that consists of two deposition chambers, a transfer chamber, a metrology system with sensors, and a control system. The system is designed to deposit layers of organic material onto a workpiece while maintaining a vacuum. The control system is responsible for coordinating the deposition process and receiving measurements of the workpiece from the metrology system.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | An organic light-emitting diode (OLED) deposition system includes two deposition chambers, a transfer chamber between the two deposition chambers, a metrology system having one or more sensors to perform measurements of the workpiece within the transfer chamber, and a control system to cause the system to form an organic light-emitting diode layer stack on the workpiece. Vacuum is maintained around the workpiece while the workpiece is transferred between the two deposition chambers and while retaining the workpiece within the transfer chamber. The control system is configured to cause the two deposition chambers to deposit two layers of organic material onto the workpiece, and to receive a first plurality of measurements of the workpiece in the transfer chamber from the metrology system.
| |
| | | | |
| | ===DEPOSITION METHODS AND APPARATUS FOR PIEZOELECTRIC APPLICATIONS (18022652)=== | | ===DEPOSITION METHODS AND APPARATUS FOR PIEZOELECTRIC APPLICATIONS (18022652)=== |
| Line 357: |
Line 184: |
| | '''Inventor''' | | '''Inventor''' |
| | Abhijeet Laxman SANGLE | | Abhijeet Laxman SANGLE |
| − |
| |
| − | '''Brief explanation'''
| |
| − | The abstract describes methods and devices for creating uniform layers on a substrate for piezoelectric applications. This involves depositing a very thin seed layer with a consistent thickness across its surface, as well as a template layer that matches the crystal structure of the piezoelectric material to be formed. These uniform layers help improve the quality and properties of the resulting piezoelectric materials.
| |
| − |
| |
| − | '''Abstract'''
| |
| − | Disclosed are methods and apparatus for depositing uniform layers on a substrate () for piezoelectric applications. An ultra-thin seed layer () having a uniform thickness from center to edge thereof is deposited on a substrate (). A template layer () closely matching the crystal structure of a subsequently formed piezoelectric material layer () is deposited on a substrate (). The uniform thickness and orientation of the seed layer () and the template layer (), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.
| |
