Difference between revisions of "Applied Materials, Inc. patent applications published on November 30th, 2023"

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==Patent applications for Applied Materials, Inc. on November 30th, 2023==
 
==Patent applications for Applied Materials, Inc. on November 30th, 2023==
  
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===DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION ([[US Patent Application 18365527. DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION simplified abstract|18365527]])===
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===DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION ([[US Patent Application 18365527. DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION simplified abstract (Applied Materials, Inc.)|18365527]])===
  
  
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===OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968608. OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract|17968608]])===
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===OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968608. OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract (Applied Materials, Inc.)|17968608]])===
  
  
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===CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968597. CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract|17968597]])===
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===CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968597. CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract (Applied Materials, Inc.)|17968597]])===
  
  
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===GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES ([[US Patent Application 17974280. GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES simplified abstract|17974280]])===
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===GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES ([[US Patent Application 17974280. GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES simplified abstract (Applied Materials, Inc.)|17974280]])===
  
  
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===MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS ([[US Patent Application 18232421. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract|18232421]])===
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===MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS ([[US Patent Application 18232421. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract (Applied Materials, Inc.)|18232421]])===
  
  
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===METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE ([[US Patent Application 18143747. METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE simplified abstract|18143747]])===
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===METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE ([[US Patent Application 18143747. METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE simplified abstract (Applied Materials, Inc.)|18143747]])===
  
  
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===METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE ([[US Patent Application 17824282. METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE simplified abstract|17824282]])===
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===METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE ([[US Patent Application 17824282. METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE simplified abstract (Applied Materials, Inc.)|17824282]])===
  
  
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===SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE ([[US Patent Application 17827204. SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE simplified abstract|17827204]])===
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===SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE ([[US Patent Application 17827204. SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE simplified abstract (Applied Materials, Inc.)|17827204]])===
  
  
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===GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE ([[US Patent Application 18303370. GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE simplified abstract|18303370]])===
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===GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE ([[US Patent Application 18303370. GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE simplified abstract (Applied Materials, Inc.)|18303370]])===
  
  
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===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871455. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract|17871455]])===
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===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871455. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract (Applied Materials, Inc.)|17871455]])===
  
  
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===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract|17871505]])===
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===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract (Applied Materials, Inc.)|17871505]])===
  
  
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===SITU CLEAN FOR BEVEL AND EDGE RING ([[US Patent Application 17829288. SITU CLEAN FOR BEVEL AND EDGE RING simplified abstract|17829288]])===
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===SITU CLEAN FOR BEVEL AND EDGE RING ([[US Patent Application 17829288. SITU CLEAN FOR BEVEL AND EDGE RING simplified abstract (Applied Materials, Inc.)|17829288]])===
  
  
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===LOW TEMPERATURE SILICON OXIDE GAP FILL ([[US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract|17827652]])===
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===LOW TEMPERATURE SILICON OXIDE GAP FILL ([[US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract (Applied Materials, Inc.)|17827652]])===
  
  
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===HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES ([[US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract|17827356]])===
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===HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES ([[US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract (Applied Materials, Inc.)|17827356]])===
  
  
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===SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER ([[US Patent Application 17824889. SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER simplified abstract|17824889]])===
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===SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER ([[US Patent Application 17824889. SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER simplified abstract (Applied Materials, Inc.)|17824889]])===
  
  
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===DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS ([[US Patent Application 18082872. DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS simplified abstract|18082872]])===
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===DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS ([[US Patent Application 18082872. DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS simplified abstract (Applied Materials, Inc.)|18082872]])===
  
  
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===METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE ([[US Patent Application 18233751. METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE simplified abstract|18233751]])===
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===METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE ([[US Patent Application 18233751. METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE simplified abstract (Applied Materials, Inc.)|18233751]])===
  
  
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===FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING ([[US Patent Application 17974281. FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING simplified abstract|17974281]])===
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===FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING ([[US Patent Application 17974281. FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING simplified abstract (Applied Materials, Inc.)|17974281]])===
  
  
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===OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME ([[US Patent Application 17985632. OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME simplified abstract|17985632]])===
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===OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME ([[US Patent Application 17985632. OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME simplified abstract (Applied Materials, Inc.)|17985632]])===
  
  
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===SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF ([[US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract|18231414]])===
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===SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF ([[US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract (Applied Materials, Inc.)|18231414]])===
  
  

Latest revision as of 06:38, 7 December 2023

Summary of the patent applications from Applied Materials, Inc. on November 30th, 2023

Applied Materials, Inc. has recently filed several patents related to various aspects of semiconductor device processing and manufacturing. These patents cover topics such as spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices, OLED device processing, chemical mechanical polishing assemblies, substrate backside damage reduction, metal oxo photoresist deposition, selective metal removal, semiconductor processing using oxygen-containing and halide precursors, flowable silicon film for gap filling, cleaning bevel areas of substrate supports, and flow guides for semiconductor manufacturing.

Summary: - Applied Materials, Inc. has filed patents for spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and their manufacturing methods. - They have also filed patents for methods of processing OLED devices, including the formation of anode layers using metal oxide materials and protective barriers. - Patents have been filed for chemical mechanical polishing assemblies, including fluid delivery conduits with conductive wires for electrostatic discharge. - Applied Materials, Inc. has filed patents for reducing substrate backside damage during semiconductor device processing, including plasma preheat treatments and improved substrate support designs. - They have also filed patents for depositing metal oxo photoresist films using dry deposition processes, eliminating the need for wet chemical processes. - Patents have been filed for selectively removing metal material from feature surfaces and sidewalls, as well as for semiconductor processing using oxygen-containing and halide precursors. - Applied Materials, Inc. has filed patents for filling gaps within substrate features using flowable silicon films, cleaning bevel areas of substrate supports, and flow guides for deposition process adjustability in semiconductor manufacturing.

Notable Applications:

  • SOT-MRAM devices and manufacturing methods.
  • OLED device processing methods.
  • Chemical mechanical polishing assemblies with electrostatic discharge capabilities.
  • Substrate backside damage reduction during semiconductor processing.
  • Metal oxo photoresist deposition using dry processes.
  • Selective metal removal from feature surfaces and sidewalls.
  • Semiconductor processing using oxygen-containing and halide precursors.
  • Flowable silicon film for gap filling in substrate features.
  • Cleaning bevel areas of substrate supports in plasma processing chambers.
  • Flow guides for deposition process adjustability in semiconductor manufacturing.



Contents

Patent applications for Applied Materials, Inc. on November 30th, 2023

DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION (18365527)

Main Inventor

Kun Xu


OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING (17968608)

Main Inventor

Steven M. Zuniga


CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING (17968597)

Main Inventor

Steven M. Zuniga


GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES (17974280)

Main Inventor

Chad Pollard


MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS (18232421)

Main Inventor

Chandan Kr Barik


METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE (18143747)

Main Inventor

Jinxin FU


METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE (17824282)

Main Inventor

Jui-Che Lin


SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE (17827204)

Main Inventor

Tyler Wills


GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE (18303370)

Main Inventor

Frank Sinclair


PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY (17871455)

Main Inventor

Zhepeng CONG


PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY (17871505)

Main Inventor

Zhepeng CONG


SITU CLEAN FOR BEVEL AND EDGE RING (17829288)

Main Inventor

Kaushik ALAYAVALLI


LOW TEMPERATURE SILICON OXIDE GAP FILL (17827652)

Main Inventor

Soham Asrani


HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES (17827356)

Main Inventor

Xiaolin C. Chen


SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER (17824889)

Main Inventor

Liqi Wu


DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS (18082872)

Main Inventor

Lakmal Charidu Kalutarage


METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE (18233751)

Main Inventor

Liangfa HU


FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING (17974281)

Main Inventor

Chad Pollard


OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME (17985632)

Main Inventor

Chung-Chia Chen


SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF (18231414)

Main Inventor

Minrui YU

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