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| | ==Patent applications for Applied Materials, Inc. on November 30th, 2023== | | ==Patent applications for Applied Materials, Inc. on November 30th, 2023== |
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| − | ===DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION ([[US Patent Application 18365527. DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION simplified abstract|18365527]])=== | + | ===DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION ([[US Patent Application 18365527. DETERMINATION OF SUBSTRATE LAYER THICKNESS WITH POLISHING PAD WEAR COMPENSATION simplified abstract (Applied Materials, Inc.)|18365527]])=== |
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| − | '''Brief explanation'''
| + | ===OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968608. OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract (Applied Materials, Inc.)|17968608]])=== |
| − | The patent application describes a method for training a neural network to estimate the thickness profile of a test substrate during a polishing process.
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| − | | |
| − | * The method involves obtaining two ground truth thickness profiles for the test substrate.
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| − | * Two thickness profiles are also obtained using an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses.
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| − | * An estimated thickness profile for another thickness value is generated by interpolating between the two profiles.
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| − | * The neural network is then trained using the estimated thickness profile.
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| − | | |
| − | '''Abstract'''
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| − | A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.
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| − | | |
| − | ===OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968608. OPERATION OF CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract|17968608]])=== | |
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| − | '''Brief explanation'''
| + | ===CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968597. CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract (Applied Materials, Inc.)|17968597]])=== |
| − | The patent application describes a method of polishing substrates using a polishing pad and a retainer. The method involves the following steps:
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| − | | |
| − | * Bringing the substrate into contact with the polishing pad and creating relative motion between them.
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| − | * Using a retainer to hold the substrate on the polishing pad.
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| − | * During the polishing process, the diameter of the inner surface of the retainer is alternated between reducing and increasing.
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| − | * Reducing the diameter of the inner surface of the retainer clamps the substrate, while increasing the diameter releases the substrate from clamping.
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| − | * The substrate is continuously retained on the polishing pad throughout the process.
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| − | | |
| − | This method aims to improve the polishing process by providing a mechanism to securely hold the substrate in place while allowing for easy release when needed.
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| − | | |
| − | '''Abstract'''
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| − | A method of polishing includes bringing a substrate into contact with a polishing pad and generating relative motion between the substrate and the polishing pad, retaining the substrate on the polishing pad with a retainer, and during polishing of the substrate alternating between reducing a diameter of an inner surface of the retainer to clamp the substrate and increasing the diameter of the inner surface of the retainer to release the substrate from clamping while continuing to retain the substrate.
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| − | | |
| − | ===CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING ([[US Patent Application 17968597. CLAMPING RETAINER FOR CHEMICAL MECHANICAL POLISHING simplified abstract|17968597]])=== | |
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| − | '''Brief explanation'''
| + | ===GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES ([[US Patent Application 17974280. GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES simplified abstract (Applied Materials, Inc.)|17974280]])=== |
| − | - The patent application describes a carrier head used in chemical mechanical polishing.
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| − | - The carrier head includes a housing, a substrate mounting surface, and a retaining ring assembly.
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| − | - The retaining ring assembly consists of an inner ring, a first actuator, an outer ring, and a second actuator.
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| − | - The inner ring surrounds the substrate mounting surface and has slots that divide it into arcuate segments.
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| − | - The first actuator adjusts the vertical load on the inner ring.
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| − | - The outer ring surrounds the inner ring.
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| − | - The second actuator applies a radially inward pressure to flex the arcuate segments inwardly.
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| − | - The purpose of this design is to provide better control and stability during the polishing process.
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| − | | |
| − | '''Abstract'''
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| − | A carrier head for chemical mechanical polishing includes a housing, a substrate mounting surface, and a retaining ring assembly. The retaining ring assembly includes an inner ring surrounding the substrate mounting surface and having an inner surface to retain the substrate below the substrate mounting surface, a first actuator to adjust a vertical load on the inner ring, an outer ring surrounding the inner ring, and a second actuator positioned between the inner ring and the outer ring. The inner ring has a plurality of slots that are formed in a lower surface and that extend from the inner surface to an outer surface of the inner ring to divide the inner ring into a plurality of arcuate segments suspended from an upper portion. The second actuator applies a radially inward pressure such that the plurality of arcuate segments flex inwardly relative to the upper portion.
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| − | | |
| − | ===GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES ([[US Patent Application 17974280. GROUNDING TECHNIQUES FOR ESD POLYMERIC FLUID LINES simplified abstract|17974280]])=== | |
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| − | '''Brief explanation'''
| + | ===MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS ([[US Patent Application 18232421. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract (Applied Materials, Inc.)|18232421]])=== |
| − | - The patent application describes a chemical mechanical polishing assembly that includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit.
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| − | - The polishing system consists of a platen, a carrier head, and a motor.
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| − | - The fluid delivery conduit carries a fluid from the fluid source into the polishing system.
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| − | - The fluid delivery conduit has a conductive wire that allows electrostatic discharge to flow to a ground.
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| − | - A wire extraction fitting is used to cover and seal the location where the conductive wire passes through the wall of the fluid delivery conduit.
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| − | | |
| − | '''Abstract'''
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| − | A chemical mechanical polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The polishing system has a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes a conductive wire extending through an interior of the conduit to flow electrostatic discharge to a ground, and a wire extraction fitting covering and sealing a location where the conductive wire passes through a wall of the fluid delivery conduit.
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| − | | |
| − | ===MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS ([[US Patent Application 18232421. MOLYBDENUM(0) PRECURSORS FOR DEPOSITION OF MOLYBDENUM FILMS simplified abstract|18232421]])=== | |
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| − | '''Brief explanation'''
| + | ===METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE ([[US Patent Application 18143747. METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE simplified abstract (Applied Materials, Inc.)|18143747]])=== |
| − | The patent application describes molybdenum(0) and coordination complexes, as well as methods for depositing molybdenum-containing films on a substrate.
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| − | | |
| − | * The patent application explains how to form molybdenum-containing films on a substrate using a molybdenum precursor and a reactant.
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| − | * The films can be made of various molybdenum compounds such as elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, or molybdenum nitride.
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| − | * The deposition process can be done sequentially or simultaneously, depending on the desired outcome.
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| − | | |
| − | '''Abstract'''
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| − | Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.
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| − | | |
| − | ===METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE ([[US Patent Application 18143747. METHOD TO IMPROVE DISPLAY EFFICIENCY AND UNIFORMITY OF AR WAVEGUIDE simplified abstract|18143747]])=== | |
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| − | '''Brief explanation'''
| + | ===METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE ([[US Patent Application 17824282. METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE simplified abstract (Applied Materials, Inc.)|17824282]])=== |
| − | - The patent application is about methods of modifying and engineering the effective thickness of an optical device substrate.
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| − | - The methods involve depositing a material that matches the refractive index of the substrate.
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| − | - This deposited material alters the thickness distribution of the optical device.
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| − | - By adjusting the thickness distribution, the path of light passing through the device is controlled.
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| − | - The purpose of this control is to direct the light to the output coupling grating.
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| − | - The innovation lies in the ability to modulate the optical path of light by altering the thickness distribution of the substrate.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments of the present disclosure generally relate to methods of modifying and engineering the effective thickness of an optical device substrate. The methods provide for depositing a material that is index-matched to the substrate to alter a thickness distribution of the optical device. By adjusting the thickness distribution, the optical path of light is modulated to direct the light to the output coupling grating.
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| − | | |
| − | ===METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE ([[US Patent Application 17824282. METHODS AND MECHANISMS FOR PREVENTING FLUCTUATION IN MACHINE-LEARNING MODEL PERFORMANCE simplified abstract|17824282]])=== | |
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| − | '''Brief explanation'''
| + | ===SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE ([[US Patent Application 17827204. SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE simplified abstract (Applied Materials, Inc.)|17827204]])=== |
| − | The patent application describes an electronic device manufacturing system that uses input data to analyze and improve the manufacturing process of a substrate.
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| − | | |
| − | * The system generates a characteristic sequence that defines the relationship between different manufacturing parameters.
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| − | * It then determines the relationship between variables related to the manufacturing process and the characteristic sequence.
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| − | * Based on this relationship, the system assigns a weight to the feature being analyzed.
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| − | * The system uses this weighted feature to train a machine-learning model, which can then be used to optimize the manufacturing process.
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| − | | |
| − | '''Abstract'''
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| − | An electronic device manufacturing system configured to receive, by a processor, input data reflecting a feature related to a manufacturing process of a substrate. The manufacturing system is further configured to generate a characteristic sequence defining a relationship between at least two manufacturing parameters, and determine a relationship between one or more variables related to the feature and the characteristic sequence. The manufacturing system is further configured to determine a weight based on the determined relationship and apply the weight to the feature. The manufacturing system is further configured to train a machine-learning model in view of the weighted feature.
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| − | | |
| − | ===SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE ([[US Patent Application 17827204. SYSTEMS AND METHODS FOR OPTIMIZING FULL HORIZONTAL SCANNED BEAM DISTANCE simplified abstract|17827204]])=== | |
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| − | '''Brief explanation'''
| + | ===GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE ([[US Patent Application 18303370. GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE simplified abstract (Applied Materials, Inc.)|18303370]])=== |
| − | - The patent application describes methods for optimizing the distance that an accelerator beam can be scanned horizontally.
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| − | - The approach involves positioning two Faraday cups on opposite sides of the intended beam-scan area.
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| − | - An ion beam is then scanned along the first and second sides of the intended beam-scan area.
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| − | - The first and second Faraday cups measure the beam current of the ion beam at their respective positions.
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| − | - Based on the measurements from the Faraday cups, an optimal scan distance for the ion beam across the intended beam-scan area is determined.
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| − | - The invention aims to improve the efficiency and accuracy of accelerator beam scanning.
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| − | | |
| − | '''Abstract'''
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| − | Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.
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| − | | |
| − | ===GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE ([[US Patent Application 18303370. GA IMPLANT PROCESS CONTROL FOR ENHANCED PARTICLE PERFORMANCE simplified abstract|18303370]])=== | |
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| − | '''Brief explanation'''
| + | ===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871455. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract (Applied Materials, Inc.)|17871455]])=== |
| − | - The patent application describes a method for reducing gallium particle formation in an ion implanter.
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| − | - The method involves performing a gallium implant process in the ion implanter, where a first dose of gallium ions is implanted into a set of substrates.
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| − | - During the implant process, metallic gallium material is deposited on surfaces within a downstream portion of the ion implanter.
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| − | - To address this issue, a reactive gas bleed operation is performed in the downstream portion of the ion implanter.
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| − | - The reactive gas is provided through a gas injection assembly and reacts with the metallic gallium material, altering its properties.
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| − | - The purpose of the reactive gas bleed operation is to prevent or reduce the formation of gallium particles, which can negatively impact the performance of the ion implanter.
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| − | - This method aims to improve the efficiency and reliability of ion implantation processes by minimizing gallium particle formation.
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| − | | |
| − | '''Abstract'''
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| − | A method of reducing gallium particle formation in an ion implanter. The method may include performing a gallium implant process in the ion implanter, the gallium implant process comprising implanting a first dose of gallium ions from a gallium ion beam into a first set of substrates, while the first set of substrates are disposed in a process chamber of the beamline ion implanter. As such, a metallic gallium material may be deposited on one or more surfaces within a downstream portion of the ion implanter. The method may include performing a reactive gas bleed operation into at least one location of the downstream portion of the ion implanter, the reactive bleed operation comprising providing a reactive gas through a gas injection assembly, wherein the metallic gallium material is altered by reaction with the reactive gas.
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| − | | |
| − | ===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871455. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract|17871455]])=== | |
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| − | '''Brief explanation'''
| + | ===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract (Applied Materials, Inc.)|17871505]])=== |
| − | - The patent application is about flow guides, process kits, and methods for processing chambers in order to make deposition processes more adjustable.
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| − | - The flow guide described in the application consists of a middle plate with two arcuate sides, a first flange extending outwardly from one side of the middle plate, and a second flange extending outwardly from the opposite side of the middle plate.
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| − | - The first and second flanges create a rectangular flow opening between them.
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| − | - The flow guide is designed to facilitate the adjustment of deposition processes in processing chambers.
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| − | | |
| − | '''Abstract'''
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| − | The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.
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| − | | |
| − | ===PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY ([[US Patent Application 17871505. PROCESS KITS AND RELATED METHODS FOR PROCESSING CHAMBERS TO FACILITATE DEPOSITION PROCESS ADJUSTABILITY simplified abstract|17871505]])=== | |
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| − | '''Brief explanation'''
| + | ===SITU CLEAN FOR BEVEL AND EDGE RING ([[US Patent Application 17829288. SITU CLEAN FOR BEVEL AND EDGE RING simplified abstract (Applied Materials, Inc.)|17829288]])=== |
| − | - The patent application is about flow guides, process kits, and methods for processing chambers in semiconductor manufacturing.
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| − | - The flow guide described in the patent includes a plate with a first face and a second face.
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| − | - The flow guide also includes a first fin set and a second fin set extending from the second face.
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| − | - The second fin set is spaced from the first fin set, creating a flow path between them.
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| − | - The flow path has a serpentine pattern between the first fin set and the second fin set.
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| − | - The purpose of this flow guide is to facilitate deposition process adjustability in semiconductor manufacturing.
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| − | | |
| − | '''Abstract'''
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| − | The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.
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| − | | |
| − | ===SITU CLEAN FOR BEVEL AND EDGE RING ([[US Patent Application 17829288. SITU CLEAN FOR BEVEL AND EDGE RING simplified abstract|17829288]])=== | |
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| − | '''Brief explanation'''
| + | ===LOW TEMPERATURE SILICON OXIDE GAP FILL ([[US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract (Applied Materials, Inc.)|17827652]])=== |
| − | - The patent application describes a method for cleaning a bevel area of a substrate support in a plasma processing chamber.
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| − | - The method involves placing a cover substrate on the substrate support and providing a cleaning gas into the processing chamber.
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| − | - A plasma is then created in the chamber, and the cleaning gas is directed through the substrate support to clean the bevel edge area.
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| − | - The bevel edge area is the space between the outer diameter of the cover substrate and an edge ring on the substrate support.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments disclosed herein include a method for cleaning a bevel area of a substrate support disposed within a plasma processing chamber. In one example the method begins by placing a cover substrate on a substrate support disposed in an interior volume of a processing chamber. A cleaning gas is provided into the interior volume of the processing chamber. A plasma is struck in the interior volume of the processing chamber. A cleaning gas is provided through the substrate support to a bevel edge area defined between an outer diameter of the cover substrate and an edge ring disposed on the substrate support.
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| − | | |
| − | ===LOW TEMPERATURE SILICON OXIDE GAP FILL ([[US Patent Application 17827652. LOW TEMPERATURE SILICON OXIDE GAP FILL simplified abstract|17827652]])=== | |
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| − | '''Brief explanation'''
| + | ===HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES ([[US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract (Applied Materials, Inc.)|17827356]])=== |
| − | - The patent application is about methods for filling gaps within substrate features using a flowable silicon film.
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| − | - The flowable silicon film is thicker on the bottom and top surfaces of the feature than on the sidewall surface.
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| − | - An etch plasma is used to remove the silicon film from the sidewall surface.
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| − | - A conversion plasma is then used to convert the silicon film into a silicon-based gapfill material, such as silicon oxide.
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| − | - In some embodiments, the silicon film is preferentially converted on the top and bottom surfaces before being etched from the sidewall surface.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments of the disclosure relate to methods for forming silicon based gapfill within substrate features. A flowable silicon film is formed within the feature with a greater thickness on the bottom and top surfaces than the sidewall surface. An etch plasma removes the silicon film from the sidewall surface. A conversion plasma is used to convert the silicon film to a silicon based gapfill (e.g., silicon oxide). In some embodiments, the silicon film is preferentially converted on the top and bottom surface before being etched from the sidewall surface.
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| − | | |
| − | ===HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES ([[US Patent Application 17827356. HIGHLY CONFORMAL METAL ETCH IN HIGH ASPECT RATIO SEMICONDUCTOR FEATURES simplified abstract|17827356]])=== | |
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| − | '''Brief explanation'''
| + | ===SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER ([[US Patent Application 17824889. SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER simplified abstract (Applied Materials, Inc.)|17824889]])=== |
| − | The patent application describes a method for semiconductor processing using an oxygen-containing precursor and a halide precursor.
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| − | | |
| − | * The method involves providing the oxygen-containing precursor to a semiconductor processing chamber where a substrate is located.
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| − | * The substrate has a trench between two columns and recesses in at least one of the columns containing molybdenum-containing metal regions.
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| − | * A molybdenum-containing first liner is formed on the sidewall of the trench, connecting at least two of the molybdenum-containing metal regions.
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| − | * A plasma of the oxygen-containing precursor is formed and the molybdenum-containing first liner is exposed to the plasma effluents, resulting in the formation of an oxidized portion of molybdenum.
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| − | * A halide precursor is then provided and the oxidized portion of molybdenum is removed from the sidewall of the trench by contacting it with the plasma effluents of the halide precursor.
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| − | | |
| − | '''Abstract'''
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| − | Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.
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| − | | |
| − | ===SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER ([[US Patent Application 17824889. SELECTIVE METAL REMOVAL WITH FLOWABLE POLYMER simplified abstract|17824889]])=== | |
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| − | '''Brief explanation'''
| + | ===DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS ([[US Patent Application 18082872. DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS simplified abstract (Applied Materials, Inc.)|18082872]])=== |
| − | - The patent application describes methods for selectively removing metal material from the top surface and sidewalls of a feature.
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| − | - The metal material that is covered by a flowable polymer material is not affected by the removal process.
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| − | - The metal material is formed using physical vapor deposition, resulting in a relatively thin sidewall thickness.
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| − | - After removing the metal material from the top surface, any remaining metal material on the sidewall can be etched using an additional etch process.
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| − | - The resulting metal layer at the bottom of the feature helps with selective metal gapfill of the feature.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.
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| − | ===DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS ([[US Patent Application 18082872. DEPOSITION OF SEMICONDUCTOR INTEGRATION FILMS simplified abstract|18082872]])=== | |
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| − | '''Brief explanation'''
| + | ===METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE ([[US Patent Application 18233751. METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE simplified abstract (Applied Materials, Inc.)|18233751]])=== |
| − | - The patent application describes methods of depositing a metal oxo photoresist using dry deposition processes.
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| − | - The method involves forming a first metal oxo film on a substrate using a first vapor phase process that includes a first metal precursor vapor and a first oxidant vapor.
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| − | - A second metal oxo film is then formed over the first metal oxo film using a second vapor phase process that includes a second metal precursor vapor and a second oxidant vapor.
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| − | - The purpose of this method is to provide a simplified and efficient way of depositing metal oxo photoresist films on substrates.
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| − | - The dry deposition processes described in the patent application eliminate the need for wet chemical processes, making the overall process more environmentally friendly.
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| − | - The use of metal oxo photoresist films can have various applications in industries such as semiconductor manufacturing, photovoltaics, and microelectronics.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.
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| − | | |
| − | ===METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE ([[US Patent Application 18233751. METHODS AND APPARATUS FOR MINIMIZING SUBSTRATE BACKSIDE DAMAGE simplified abstract|18233751]])=== | |
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| − | '''Brief explanation'''
| + | ===FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING ([[US Patent Application 17974281. FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING simplified abstract (Applied Materials, Inc.)|17974281]])=== |
| − | - The patent application is about reducing substrate backside damage during semiconductor device processing.
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| − | - One method described in the application involves exposing the substrate to a plasma preheat treatment before applying a chucking voltage to a substrate support.
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| − | - The substrate support described in the application includes a body with an electrode and thermal control device, as well as substrate supporting features on the upper surface.
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| − | - Each substrate supporting feature has a substrate supporting surface and a rounded edge.
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| − | - The purpose of these features is to provide better support for the substrate and reduce the risk of damage during processing.
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| − | | |
| − | '''Abstract'''
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| − | Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.
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| − | | |
| − | ===FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING ([[US Patent Application 17974281. FLUID-TIGHT ELECTRICAL CONNECTION TECHNIQUES FOR SEMICONDUCTOR PROCESSING simplified abstract|17974281]])=== | |
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| − | '''Brief explanation'''
| + | ===OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME ([[US Patent Application 17985632. OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME simplified abstract (Applied Materials, Inc.)|17985632]])=== |
| − | - The patent application describes a chemical mechanical polishing assembly that includes a system for polishing materials.
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| − | - The assembly includes a fluid source and a conduit to deliver fluid from the source to the polishing system.
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| − | - The polishing system consists of a platen, a carrier head, and a motor to create motion between them.
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| − | - The fluid delivery conduit has a conductive wire inside it to discharge electrostatic energy to the ground.
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| − | - A wire extraction fitting is used to cover and seal the location where the conductive wire passes through the conduit wall.
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| − | | |
| − | * The patent application describes a chemical mechanical polishing assembly.
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| − | * The assembly includes a fluid source and a conduit for fluid delivery.
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| − | * The polishing system consists of a platen, a carrier head, and a motor.
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| − | * The fluid delivery conduit has a conductive wire for electrostatic discharge.
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| − | * A wire extraction fitting is used to cover and seal the conduit wall.
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| − | | |
| − | '''Abstract'''
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| − | A chemical mechanical polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The polishing system has a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes a conductive wire extending through an interior of the conduit to flow electrostatic discharge to a ground, and a wire extraction fitting covering and sealing a location where the conductive wire passes through a wall of the fluid delivery conduit.
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| − | | |
| − | ===OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME ([[US Patent Application 17985632. OLED ANODE STRUCTURES INCLUDING AMORPHOUS TRANSPARENT CONDUCTING OXIDES AND OLED PROCESSING METHOD COMPRISING THE SAME simplified abstract|17985632]])=== | |
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| − | '''Brief explanation'''
| + | ===SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF ([[US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract (Applied Materials, Inc.)|18231414]])=== |
| − | The patent application describes methods for processing OLED devices.
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| − | * The methods involve forming an anode on a substrate.
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| − | * The anode formation includes several steps:
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| − | - Forming a first metal oxide material on the substrate.
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| − | - Forming a metal layer over the first metal oxide material.
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| − | - Forming a protective barrier over the metal layer.
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| − | - Forming a second metal oxide material over the amorphous protection material.
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| − | * The protective barrier is an amorphous protection material that covers the metal layer.
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| − | | |
| − | '''Abstract'''
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| − | Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.
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| − | | |
| − | ===SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF ([[US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract|18231414]])=== | |
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| | Minrui YU | | Minrui YU |
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| − |
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| − | '''Brief explanation'''
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| − | The patent application is about spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and their manufacturing methods.
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| − | * SOT-MRAM devices have an SOT layer and a magnetic tunnel junction (MTJ) stack.
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| − | * The SOT layer is laterally aligned with the MTJ stack and is formed over a trench in an interconnect.
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| − | * This eliminates the presence of the SOT layer outside the area of the MTJ stack.
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| − | * Electric current passes from the interconnect to the SOT layer through SOT-interconnect overlap.
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| − | * This reduces the formation of shunting current.
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| − | * The MTJ self-aligns with the SOT layer in a single etching process.
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| − |
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| − | '''Abstract'''
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| − | Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.
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