Apple inc. (20240128274). Displays With Silicon and Semiconducting Oxide Thin-Film Transistors simplified abstract

Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

Organization Name

apple inc.

Inventor(s)

Vasudha Gupta of Cupertino CA (US)

Jae Won Choi of San Jose CA (US)

Shih Chang Chang of Cupertino CA (US)

Tsung-Ting Tsai of San Jose CA (US)

Young Bae Park of San Jose CA (US)

Displays With Silicon and Semiconducting Oxide Thin-Film Transistors - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240128274 titled 'Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

Simplified Explanation

The abstract of the patent application describes an electronic device with a display that includes organic light-emitting diode display pixels or liquid crystal display pixels. The device may have hybrid thin-film transistor structures with semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. In the organic light-emitting diode display, the capacitor structures may overlap the semiconducting oxide thin-film transistors. Display pixels may have combinations of oxide and silicon transistors. In the liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry, and display pixels may be based on oxide thin-film transistors. Different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

• The electronic device includes a display with organic light-emitting diode display pixels or liquid crystal display pixels.
• Hybrid thin-film transistor structures are formed in the device, including semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures.
• Display pixels may have combinations of oxide and silicon transistors.
• Different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates.
• Silicon transistors may have gates that overlap floating gate structures.

Potential Applications

The technology described in the patent application could be applied in:

• Consumer electronics
• Display panels
• Wearable devices

Problems Solved

The technology addresses issues related to:

• Display pixel performance
• Power efficiency
• Manufacturing complexity

Benefits

The benefits of this technology include:

• Improved display quality
• Enhanced power efficiency
• Simplified manufacturing processes

Potential Commercial Applications of this Technology

The potential commercial applications of this technology could be seen in:

• Smartphone displays
• Smartwatches
• Tablets

Possible Prior Art

One possible prior art related to this technology is the use of hybrid thin-film transistor structures in display devices, combining different types of transistors for improved performance and efficiency.

How does this technology impact the overall cost of electronic devices?

The cost implications of implementing this technology in electronic devices are not addressed in the abstract. Further research and analysis would be needed to determine the cost-effectiveness of this innovation.

What are the environmental implications of using this technology in electronic devices?

The environmental impact of the materials and manufacturing processes involved in this technology is not discussed in the abstract. A comprehensive life cycle assessment would be necessary to evaluate the environmental sustainability of this innovation.

Original Abstract Submitted

an electronic device may include a display having an array of display pixels on a substrate. the display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. in an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. the capacitor structures may overlap the semiconducting oxide thin-film transistors. organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. in a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. a single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. a silicon transistor may have a gate that overlaps a floating gate structure.