Apple inc. (20240107738). SRAM Macro Design Architecture simplified abstract
Contents
- 1 SRAM Macro Design Architecture
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SRAM Macro Design Architecture - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SRAM Macro Design Architecture
Organization Name
Inventor(s)
Saurabh P. Sinha of Austin TX (US)
Shahzad Nazar of Fremont CA (US)
Emre Alptekin of San Jose CA (US)
SRAM Macro Design Architecture - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107738 titled 'SRAM Macro Design Architecture
Simplified Explanation
The patent application describes a memory device layout that implements SRAM cells with stacked transistors, utilizing both topside metal routing and backside metal routing for routing of bitlines between bit cells with stacked transistors and logic cells coupled to the bit cells.
- Stacked transistor SRAM cells are used in the memory device layout.
- Both topside metal routing and backside metal routing are employed for routing of bitlines.
- The memory device layout includes logic cells coupled to the bit cells.
Potential Applications
The technology described in the patent application could be applied in:
- High-performance computing systems
- Embedded systems requiring fast and efficient memory access
Problems Solved
The technology addresses the following issues:
- Efficient routing of bitlines in memory devices with stacked transistor SRAM cells
- Integration of logic cells with bit cells in memory layouts
Benefits
The benefits of this technology include:
- Improved performance and speed of memory access
- Enhanced efficiency in memory device layouts
Potential Commercial Applications
The technology could find commercial applications in:
- Semiconductor manufacturing companies
- Memory chip manufacturers
Possible Prior Art
One possible prior art could be the use of traditional SRAM cells without stacked transistors in memory device layouts.
Unanswered Questions
How does the technology impact power consumption in memory devices?
The article does not address the specific impact of the technology on power consumption in memory devices.
Are there any limitations to the scalability of this memory device layout?
The article does not discuss any potential limitations to the scalability of the described memory device layout.
Original Abstract Submitted
a memory device layout that implements sram cells with stacked transistors is disclosed. the memory utilizes both topside metal routing and backside metal routing for routing of bitlines between bit cells with stacked transistors and logic cells coupled to the bit cells.
