Apple inc. (20240107737). Stacked SRAM Cell Architecture simplified abstract
Contents
- 1 Stacked SRAM Cell Architecture
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Stacked SRAM Cell Architecture - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Stacked SRAM Cell Architecture
Organization Name
Inventor(s)
Saurabh P. Sinha of Austin TX (US)
Emre Alptekin of San Jose CA (US)
Stacked SRAM Cell Architecture - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107737 titled 'Stacked SRAM Cell Architecture
Simplified Explanation
The patent application describes a SRAM cell layout that utilizes stacked transistors to implement inverters and pass gates in a memory cell, utilizing both topside metal routing and backside metal routing for multiple transistors.
- Stacked transistors are used in the cell layout to provide multiple transistors for implementation of inverters and pass gates.
- The layout incorporates topside metal routing and backside metal routing for efficient connection routes between components of the transistors.
- Cross-coupling between inverters in the memory cell is enabled through various connection routes between components such as gates, sources, and drains.
Potential Applications
The technology could be applied in:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
- Efficient implementation of inverters and pass gates in a memory cell
- Optimization of space in semiconductor layouts
Benefits
- Increased functionality in memory cells
- Improved performance in integrated circuits
Potential Commercial Applications
- Memory chip manufacturing
- Semiconductor industry applications
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does the technology impact power consumption in memory devices?
The article does not address the specific impact of the technology on power consumption in memory devices.
Are there any limitations to the scalability of this technology in semiconductor manufacturing?
The article does not discuss any potential limitations to the scalability of the technology in semiconductor manufacturing.
Original Abstract Submitted
a sram cell layout that implements stacked transistors is disclosed. the cell layout utilizes both topside metal routing and backside metal routing along with stacked transistors to provide multiple transistors for implementation of inverters and pass gates in a memory cell. various connection routes between components of the transistors (e.g., gates, sources, and drains) are made to allow cross-coupling between inverters in the memory cell.
