AVALANCHE PHOTO DIODE: abstract simplified (18040179)

• This abstract for appeared for patent application number 18040179 Titled 'AVALANCHE PHOTO DIODE'

Simplified Explanation

The abstract describes the structure of a semiconductor device, specifically a solar cell. It consists of several layers stacked on a semiconductor substrate. These layers include a buffer layer, a multiplication layer, a light-absorbing layer, a window layer, and a contact layer.

The window layer is doped with an impurity to create a p-type region. The bandgap of the window layer is larger than the bandgap of the light-absorbing layer, which helps in efficient absorption of light. The window layer is composed of two layers, with the second layer having a higher diffusion rate for the impurity compared to the first layer.

The first window layer is made of a material called InP, which is doped with either Ru, Rh, or Os.

Original Abstract Submitted

A buffer layer (), a multiplication layer (), a light-absorbing layer (), a window layer (), and a contact layer () are sequentially stacked on a semiconductor substrate (). The window layer () is doped with an impurity to form a p-type region (). A bandgap of the window layer () is greater than a bandgap of the light-absorbing layer (). The window layer () includes a first window layer (), and a second window layer () formed on the first window layer (). A diffusion rate of the impurity in the second window layer () is higher than a diffusion rate of the impurity in the first window layer (). The first window layer () is a Ru, Rh or Os-doped InP layer.