ACOUSTIC WAVE DEVICE: abstract simplified (18209516)

• This abstract for appeared for patent application number 18209516 Titled 'ACOUSTIC WAVE DEVICE'

Simplified Explanation

The abstract describes an acoustic wave device that includes several components. These components include a support substrate, a piezoelectric layer, an IDT electrode, a wiring electrode, and a high thermal conductive film. The piezoelectric layer is located on the support substrate and has a main surface. There is a cavity portion between the support substrate and the piezoelectric layer. The IDT electrode is located on the main surface and consists of first and second busbars, as well as first and second electrode fingers connected to these busbars. The wiring electrode is also located on the main surface and is connected to the IDT electrode. The high thermal conductive film is located within the piezoelectric layer and has a higher thermal conductivity than the piezoelectric layer itself. A portion of the IDT electrode overlaps with the cavity portion, and the high thermal conductive film also overlaps with the cavity portion. Additionally, either the IDT electrode or the wiring electrode is directly connected to the high thermal conductive film, or they are connected to it via a metal.

Original Abstract Submitted

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate and including a main surface, a cavity portion between the support substrate and the piezoelectric layer, an IDT electrode on the main surface and including first and second busbars, and first and second electrode fingers respectively connected to the first and second busbars, a wiring electrode on the main surface and connected to the IDT electrode, and a high thermal conductive film in the piezoelectric layer and having a thermal conductivity higher than a thermal conductivity of the piezoelectric layer. A portion of the IDT electrode is in a region overlapping the cavity portion, the high thermal conductive film is in a region overlapping the cavity portion, and at least one of the IDT electrode and the wiring electrode is connected to the high thermal conductive film directly or via a metal.