3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS: abstract simplified (17848815)

• This abstract for appeared for patent application number 17848815 Titled '3D IC COMPRISING SEMICONDUCTOR SUBSTRATES WITH DIFFERENT BANDGAPS'

Simplified Explanation

The abstract describes a three-dimensional integrated circuit (3D IC) that is made up of two semiconductor chips stacked on top of each other. The first chip has a certain type of semiconductor material with a specific electrical property called a bandgap, and it also has a device built on it. The second chip has a different type of semiconductor material with a different bandgap, and it also has a device built on it.

Original Abstract Submitted

Various embodiments of the present disclosure are directed towards a three-dimensional (3D) IC comprising semiconductor substrates with different bandgaps. The 3D IC chip comprises a first IC chip and a second IC chip overlying and bonded to the first IC chip. The first IC chip comprises a first semiconductor substrate with a first bandgap, and further comprises and a first device on and partially formed by the first semiconductor substrate. The second IC chip comprises a second semiconductor substrate with a second bandgap different than the first bandgap, and further comprises a second device on the second semiconductor substrate.