20240089623.Image sensor with high dynamic range and low noise simplified abstract (apple inc.)

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Image sensor with high dynamic range and low noise

Organization Name

apple inc.

Inventor(s)

Vladimir Koifman of Rishon Lezion (IL)

Image sensor with high dynamic range and low noise - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240089623 titled 'Image sensor with high dynamic range and low noise

Simplified Explanation

The image sensor described in the patent application consists of a logic die with column readout circuits and a sensor die with detector elements connected to the logic die. Each detector element includes a photodiode, reset transistors, source follower transistor, output capacitor, and select transistor.

  • Photodiode with cathode and anode terminals
  • Floating diffusion node connected to one terminal of the photodiode
  • Reset transistor connected between the floating diffusion node and a reset voltage
  • Source follower transistor with input connected to the floating diffusion node and output connected to an output capacitor
  • Second reset transistor connected between the output capacitor and the reset voltage
  • Select transistor connected between the output capacitor and one of the bitlines

Potential Applications

The technology described in the patent application could be used in:

  • Digital cameras
  • Smartphones
  • Surveillance cameras
  • Medical imaging devices

Problems Solved

This technology helps in:

  • Improving image quality
  • Reducing noise in images
  • Enhancing low-light performance

Benefits

The benefits of this technology include:

  • Higher resolution images
  • Improved dynamic range
  • Lower power consumption

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Automotive cameras
  • Security systems
  • Medical imaging equipment

Possible Prior Art

One possible prior art for this technology could be the use of similar sensor configurations in previous image sensor designs.

Unanswered Questions

How does this technology compare to existing image sensor technologies in terms of performance and cost?

The article does not provide a direct comparison between this technology and existing image sensor technologies.

Are there any limitations or drawbacks to implementing this technology in practical devices?

The article does not mention any limitations or drawbacks associated with implementing this technology in practical devices.


Original Abstract Submitted

an image sensor includes a logic die, including column readout circuits, and a sensor die, overlaid on the logic die and including bitlines connected to the column readout circuits and an array of detector elements. each detector element includes a photodiode having cathode and anode terminals and a floating diffusion node connected to one of the terminals of the photodiode. a first reset transistor is coupled between the floating diffusion node and a reset voltage. a source follower transistor has an input connected to the floating diffusion node and an output connect to a first terminal of an output capacitor having first and second terminals, with the first terminal. a second reset transistor is coupled between a second terminal of the output capacitor and the reset voltage. a select transistor is coupled between the second terminal of the output capacitor and one of the bitlines.