20240088623.Vertical emitters with integrated final-stage transistor switch simplified abstract (apple inc.)
Contents
- 1 Vertical emitters with integrated final-stage transistor switch
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Vertical emitters with integrated final-stage transistor switch - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to traditional optoelectronic devices in terms of performance and efficiency?
- 1.11 What are the specific control signals required to activate the vertical emitters in this integrated emitter device?
- 1.12 Original Abstract Submitted
Vertical emitters with integrated final-stage transistor switch
Organization Name
Inventor(s)
Siddharth Joshi of Grenoble (FR)
Keith Lyon of San Jose CA (US)
[[:Category:Arnaud Laflaqui�re of Paris (FR)|Arnaud Laflaqui�re of Paris (FR)]][[Category:Arnaud Laflaqui�re of Paris (FR)]]
Christophe Verove of Le Cheylas (FR)
Vertical emitters with integrated final-stage transistor switch - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240088623 titled 'Vertical emitters with integrated final-stage transistor switch
Simplified Explanation
The integrated emitter device described in the patent application includes a silicon die with an array of control circuits and multiple integrated emitter modules. Each integrated emitter module consists of a vertical emitter structure made of III-V semiconductor compounds, distributed Bragg reflectors, and a transistor connected to a control circuit for activation.
- The integrated emitter device comprises a silicon die with control circuits and integrated emitter modules.
- Each integrated emitter module contains a vertical emitter structure with III-V semiconductor compounds and distributed Bragg reflectors.
- A transistor is linked to a control circuit to activate the vertical emitter in response to a control signal.
Potential Applications
The technology described in the patent application could be applied in various fields such as telecommunications, optical sensing, and data communication systems.
Problems Solved
This technology solves the challenge of integrating multiple emitter modules on a single silicon die efficiently and effectively.
Benefits
The benefits of this technology include improved performance, compact design, and cost-effectiveness in manufacturing integrated emitter devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the development of high-speed communication systems, optical sensors, and advanced display technologies.
Possible Prior Art
One possible prior art could be the integration of III-V semiconductor compounds in vertical emitter structures for optoelectronic devices.
Unanswered Questions
How does this technology compare to traditional optoelectronic devices in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and traditional optoelectronic devices in terms of performance and efficiency.
What are the specific control signals required to activate the vertical emitters in this integrated emitter device?
The article does not specify the exact control signals needed to activate the vertical emitters in this integrated emitter device.
Original Abstract Submitted
an integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. each integrated emitter module includes a single epitaxial stack comprising multiple layers of iii-v semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed bragg reflectors (dbrs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.
