20240087956.SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (samsung electronics co., ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Woojin Lee of Hwaseong-si (KR)
Hoon Seok Seo of Suwon-si (KR)
Sanghoon Ahn of Hwaseong-si (KR)
Kyu-Hee Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240087956 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active pattern, a first interlayer dielectric layer with a recess, and a lower connection line electrically connected to the active pattern. The lower connection line has a conductive pattern exposed by the recess and a barrier pattern between the conductive pattern and the dielectric layer.
- The semiconductor device has a substrate with an active pattern.
- A first interlayer dielectric layer is on the substrate, with a recess on its upper portion.
- A lower connection line in the dielectric layer is electrically connected to the active pattern.
- The lower connection line includes a conductive pattern exposed by the recess.
- A barrier pattern is present between the conductive pattern and the dielectric layer.
Potential Applications
This technology can be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology helps in:
- Improving electrical connections in semiconductor devices
- Enhancing performance and reliability of electronic components
Benefits
The benefits of this technology include:
- Enhanced electrical connectivity
- Improved overall device performance
- Increased reliability of electronic systems
Potential Commercial Applications
This technology can be commercially applied in:
- Semiconductor industry
- Electronics manufacturing sector
- Consumer electronics market
Possible Prior Art
One possible prior art for this technology could be:
- Existing semiconductor devices with similar interlayer dielectric and connection line structures
Unanswered Questions
How does this technology compare to existing semiconductor device structures?
This article does not provide a direct comparison with existing semiconductor device structures to highlight the unique advantages of the described technology.
What specific electronic devices can benefit the most from this technology?
The article does not specify which electronic devices would see the most significant improvements from implementing this semiconductor device structure.
Original Abstract Submitted
a semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.
