20240087666.Mitigation of transistor reliability degradation within memory circuits simplified abstract (apple inc.)
Contents
- 1 Mitigation of transistor reliability degradation within memory circuits
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Mitigation of transistor reliability degradation within memory circuits - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Mitigation of transistor reliability degradation within memory circuits
Organization Name
Inventor(s)
Assaf Shappir of Ganey Tikva (IL)
Mitigation of transistor reliability degradation within memory circuits - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240087666 titled 'Mitigation of transistor reliability degradation within memory circuits
Simplified Explanation
The patent application describes a controller that communicates with memory cells and adjusts the supply voltage to compensate for physical degradation in select transistors.
- The interface of the controller communicates with memory cells arranged in multiple address locations.
- Storage nodes in the memory cells hold storage values accessible using select transistors powered by an adjustable supply voltage.
- The circuitry reads data units protected by an error correction code (ECC) from the memory cells and decodes the ECC of the data units.
- If errors are detected in a data unit, the circuitry logs an error event with the time of occurrence and address location.
- The circuitry identifies physical degradation in select transistors based on the logged error events and adjusts the supply voltage to compensate for the degradation.
Potential Applications
This technology could be applied in various electronic devices that use memory cells, such as computers, smartphones, and servers.
Problems Solved
1. Physical degradation in select transistors due to aging. 2. Error detection and correction in data units stored in memory cells.
Benefits
1. Improved reliability and longevity of memory cells. 2. Enhanced data integrity and error correction capabilities.
Potential Commercial Applications
Optimizing the performance and lifespan of memory cells in consumer electronics and data storage devices.
Possible Prior Art
Prior art in the field of memory cell controllers and error correction techniques may exist, but specific examples are not provided in the abstract.
What is the specific method used to adjust the supply voltage to compensate for physical degradation in select transistors?
The abstract does not detail the specific method used to adjust the supply voltage to compensate for physical degradation in select transistors. Further information on the algorithm or mechanism employed for this purpose would provide a more comprehensive understanding of the technology.
How does the controller determine the extent of physical degradation in select transistors based on the logged error events?
The abstract does not elaborate on how the controller precisely determines the extent of physical degradation in select transistors based on the logged error events. Exploring the criteria or metrics used for this determination would shed light on the controller's adaptive capabilities.
Original Abstract Submitted
a controller includes an interface and circuitry. the interface communicates with memory cells arranged in multiple address locations. storage nodes holding storage values included in the memory cells are accessible using select transistors powered by an adjustable supply voltage. the circuitry reads data units protected by an error correction code (ecc) from the memory cells and decode the ecc of the data units. upon detecting, using the ecc, that a given data unit read from a given address location contains one or more errors, the circuitry logs an error event specifying at least a time of occurrence associated with the error event and the given address location. the circuitry identifies that the select transistors experience physical degradation due to aging, based on the times of occurrence and address locations logged in the error events, and adjusts the supply voltage provided to the select transistors to compensate for the physical degradation.
