20240085778.PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME simplified abstract (samsung electronics co., ltd.)
Contents
- 1 PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
Organization Name
Inventor(s)
PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240085778 titled 'PHOTOMASK INCLUDING LINE PATTERN MONITORING MARK AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
Simplified Explanation
The patent application describes a photomask with line pattern monitoring marks for use in manufacturing integrated circuit devices. The monitoring marks consist of unit blocks with three design line patterns offset in a second direction perpendicular to the first direction. The unit blocks include a first unit block and a second unit block adjacent to the first, with the second block offset from the first by a rounding length in the second direction.
- The photomask includes line pattern monitoring marks with unit blocks containing design line patterns.
- Each unit block has three design line patterns offset in a second direction perpendicular to the first.
- The unit blocks consist of a first unit block and a second unit block adjacent to each other.
- The second unit block is offset from the first by a rounding length in the second direction.
- The line end profile error in the monitoring line patterns is determined based on the cross-sectional structure of the patterns.
Potential Applications
This technology can be applied in the manufacturing of integrated circuit devices to improve the accuracy and quality of line pattern monitoring during the fabrication process.
Problems Solved
This technology helps in detecting line end profile errors in monitoring line patterns, which can lead to more precise and reliable integrated circuit devices.
Benefits
The use of this photomask with line pattern monitoring marks can result in enhanced quality control and efficiency in the manufacturing of integrated circuit devices.
Potential Commercial Applications
The technology can be utilized by semiconductor companies and manufacturers of integrated circuit devices to optimize their production processes and ensure high-quality output.
Possible Prior Art
One possible prior art could be the use of traditional photomasks with simpler monitoring marks for line patterns in the fabrication of integrated circuit devices.
Unanswered Questions
How does this technology compare to existing methods for monitoring line patterns in the manufacturing of integrated circuit devices?
This article does not provide a direct comparison to existing methods for monitoring line patterns.
What specific improvements in line pattern monitoring can be achieved with this technology compared to traditional methods?
The article does not detail the specific improvements in line pattern monitoring that can be achieved with this technology.
Original Abstract Submitted
a photomask includes at least one line pattern monitoring mark having unit blocks that include design line patterns. each of the unit blocks includes three design line patterns sequentially offset in a second direction perpendicular to the first direction, the unit blocks include a first unit block and a second unit block adjacent to the first unit block, the second unit block is offset from the first unit block by a rounding length in the second direction and is spaced apart from the first unit block in the first direction. in a method of manufacturing an integrated circuit device, monitoring line patterns are formed using the photomask, and a line end profile error in the monitoring line patterns is determined based on a cross-sectional structure of the monitoring line patterns taken along a line extending through at least a portion of the monitoring line patterns in the first direction.
