20240047591. Electromagnetic Radiation Detector with Improved Performance simplified abstract (Apple Inc.)
Electromagnetic Radiation Detector with Improved Performance
Organization Name
Inventor(s)
Matthew T. Morea of Cupertino CA (US)
Daniel Mahgerefteh of Campbell CA (US)
Romain F. Chevallier of Santa Clara CA (US)
Electromagnetic Radiation Detector with Improved Performance - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240047591 titled 'Electromagnetic Radiation Detector with Improved Performance
Simplified Explanation
The abstract of the patent application describes an electromagnetic radiation detector that utilizes a pn junction between two group III-V semiconductor materials. The pn junction is created through in-situ doping of the layers, which enhances the quality of the junction and improves the performance of the detector.
- The patent application describes an electromagnetic radiation detector.
- The detector incorporates a pn junction between two group III-V semiconductor materials.
- The pn junction is formed by in-situ doping of the layers.
- The in-situ doping process enhances the quality of the junction.
- The improved junction leads to enhanced performance of the electromagnetic radiation detector.
Potential Applications
- Radiation detection and monitoring in various industries such as healthcare, nuclear power, and environmental monitoring.
- Security systems for detecting and identifying radioactive materials.
- Scientific research and experiments involving the measurement of electromagnetic radiation.
Problems Solved
- Improved quality of the pn junction in the detector, leading to enhanced performance.
- More accurate and reliable detection of electromagnetic radiation.
- Increased sensitivity to detect low levels of radiation.
- Enhanced efficiency in converting electromagnetic radiation into measurable signals.
Benefits
- Higher sensitivity and accuracy in detecting electromagnetic radiation.
- Improved performance and reliability of radiation detection systems.
- Enhanced efficiency in converting radiation into measurable signals.
- Potential for miniaturization and integration into various devices and systems.
Original Abstract Submitted
an electromagnetic radiation detector includes a pn junction between two group iii-v semiconductor materials. the pn junction is defined by in-situ doping of the layers to improve the quality of the junction and the performance of the electromagnetic radiation detector.
