20240047537. THIN-FILM TRANSISTOR, DISPLAY PANEL, AND MANUFACTURING METHOD OF THE DISPLAY PANEL simplified abstract (TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

THIN-FILM TRANSISTOR, DISPLAY PANEL, AND MANUFACTURING METHOD OF THE DISPLAY PANEL

Organization Name

TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor(s)

Macai Lu of Shenzhen, Guangdong (CN)

Minggang Liu of Shenzhen, Guangdong (CN)

Nian Liu of Shenzhen, Guangdong (CN)

THIN-FILM TRANSISTOR, DISPLAY PANEL, AND MANUFACTURING METHOD OF THE DISPLAY PANEL - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047537 titled 'THIN-FILM TRANSISTOR, DISPLAY PANEL, AND MANUFACTURING METHOD OF THE DISPLAY PANEL

Simplified Explanation

The abstract of the patent application describes a thin-film transistor (TFT) and a display panel, along with a manufacturing method for the display panel. The TFT consists of several layers including a gate, a gate insulating layer, an active layer, a first electrode, an interlayer insulating layer, and a second electrode. The interlayer insulating layer is positioned between the first electrode and the active layer, and a first via is defined on this layer to connect the active layer to the first electrode. The thickness of the interlayer insulating layer is greater than that of the gate insulating layer, and the second electrode is connected to the active layer.

  • The patent application describes a thin-film transistor (TFT) and a display panel.
  • The TFT includes a gate, a gate insulating layer, an active layer, a first electrode, an interlayer insulating layer, and a second electrode.
  • The interlayer insulating layer is positioned between the first electrode and the active layer.
  • A first via is defined on the interlayer insulating layer to connect the active layer to the first electrode.
  • The thickness of the interlayer insulating layer is greater than that of the gate insulating layer.
  • The second electrode is connected to the active layer.

Potential Applications:

  • This technology can be used in the manufacturing of display panels for various electronic devices such as smartphones, tablets, televisions, and computer monitors.
  • It can also be applied in the production of touchscreens and other interactive display systems.

Problems Solved:

  • The interlayer insulating layer with a greater thickness helps in reducing leakage current and improving the overall performance of the TFT.
  • The defined via on the interlayer insulating layer ensures a reliable connection between the active layer and the first electrode, enhancing the functionality of the TFT.

Benefits:

  • The use of a thicker interlayer insulating layer improves the efficiency and reliability of the TFT.
  • The defined via on the interlayer insulating layer ensures a secure connection, reducing the risk of malfunction or failure.
  • The technology enables the production of high-quality display panels with improved performance and durability.


Original Abstract Submitted

a thin-film transistor (tft), a display panel, and a manufacturing method of the display panel are provided. the tft includes: a gate, a gate insulating layer, an active layer, a first electrode, an interlayer insulating layer, and a second electrode. the interlayer insulating layer is disposed between the first electrode and the active layer. a first via is defined on the interlayer insulating layer. the active layer is connected to the first electrode by the first via. a thickness of the interlayer insulating layer is greater than a thickness of the gate insulating layer. the second electrode is connected to the active layer.

Retrieved from "http://wikipatents.org/index.php?title=20240047537._THIN-FILM_TRANSISTOR,_DISPLAY_PANEL,_AND_MANUFACTURING_METHOD_OF_THE_DISPLAY_PANEL_simplified_abstract_(TCL_CHINA_STAR_OPTOELECTRONICS_TECHNOLOGY_CO.,_LTD.)&oldid=32840"