20240047383. SEMICONDUCTOR STRUCTURE HAVING DEEP TRENCH CAPACITOR AND METHOD OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)

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SEMICONDUCTOR STRUCTURE HAVING DEEP TRENCH CAPACITOR AND METHOD OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

JEN-YUAN Chang of HSINCHU CITY (TW)

SEMICONDUCTOR STRUCTURE HAVING DEEP TRENCH CAPACITOR AND METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047383 titled 'SEMICONDUCTOR STRUCTURE HAVING DEEP TRENCH CAPACITOR AND METHOD OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor structure described in the patent application includes a substrate with an array region and a seal ring region surrounding the array region. It also includes a recess in the substrate, a capacitor cell within the array region, and a seal ring within the seal ring region. The seal ring has a capacitor structure partially disposed within the recess and an interconnect structure over the capacitor structure. The interconnect structure is electrically connected to the substrate.

  • The patent application describes a semiconductor structure with a unique configuration that includes a recess in the substrate, allowing for the placement of a capacitor structure within the seal ring region.
  • The capacitor cell is disposed within the array region, providing improved integration and functionality within the semiconductor structure.
  • The interconnect structure is electrically coupled to the substrate, allowing for efficient electrical connections and signal transmission.

Potential applications of this technology:

  • This semiconductor structure can be used in various electronic devices, such as smartphones, tablets, and computers, where integrated capacitors are required.
  • It can be utilized in memory devices, such as DRAM (Dynamic Random Access Memory) chips, to enhance their performance and functionality.

Problems solved by this technology:

  • The recess in the substrate allows for the placement of the capacitor structure within the seal ring region, solving the problem of limited space for integrating capacitors in conventional semiconductor structures.
  • The integration of the capacitor cell within the array region improves the overall functionality and performance of the semiconductor structure.

Benefits of this technology:

  • The unique configuration of this semiconductor structure allows for improved integration and functionality, leading to enhanced performance in electronic devices.
  • The efficient electrical coupling provided by the interconnect structure ensures reliable signal transmission and connectivity within the semiconductor structure.


Original Abstract Submitted

the semiconductor structure includes a substrate defined with an array region and a seal ring region surrounding the array region, and including a recess extending into the substrate; a capacitor cell disposed within the array region; and a seal ring disposed within the seal ring region, and including a capacitor structure at least partially disposed within the recess, and an interconnect structure disposed over the capacitor structure, wherein the interconnect structure is electrically coupled to the substrate.

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