20240047223. SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

From WikiPatents
Jump to navigation Jump to search

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Sho Kumakura of Kurokawa-gun (JP)

Kenta Ono of Kurokawa-gun (JP)

Shinya Ishikawa of Kurokawa-gun (JP)

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240047223 titled 'SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Simplified Explanation

The present disclosure is about a substrate processing method that involves providing a substrate in a chamber. The substrate has an etching target film and a tin-containing film, where the tin-containing film defines at least one opening on the etching target film. The method further includes forming a modified film by supplying a processing gas to the chamber, which forms the modified film on the surface of the tin-containing film. The processing gas used can be a halogen-containing gas or an oxygen-containing gas.

  • The method involves providing a substrate with an etching target film and a tin-containing film.
  • The tin-containing film has at least one opening on the etching target film.
  • A processing gas is supplied to the chamber to form a modified film on the surface of the tin-containing film.
  • The processing gas can be a halogen-containing gas or an oxygen-containing gas.

Potential applications of this technology:

  • Semiconductor manufacturing: This method can be used in the fabrication of semiconductor devices where precise etching and modification of films are required.
  • Thin film deposition: The modified film formed using this method can serve as a protective layer or enhance the properties of the underlying films, making it useful in various thin film deposition processes.

Problems solved by this technology:

  • Selective modification: The method allows for selective modification of the tin-containing film without affecting the etching target film, enabling precise control over the modification process.
  • Enhanced film properties: The modified film can improve the properties of the underlying films, such as adhesion, conductivity, or optical properties, leading to improved device performance.

Benefits of this technology:

  • Selective and controlled modification: The method provides a means to selectively modify specific areas of the substrate, allowing for precise control over the modification process.
  • Improved film properties: The modified film can enhance the properties of the underlying films, leading to improved device performance and reliability.
  • Compatibility with different gases: The method can utilize either halogen-containing gases or oxygen-containing gases, providing flexibility in the choice of processing gas based on specific requirements.


Original Abstract Submitted

a substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.

Retrieved from "http://wikipatents.org/index.php?title=20240047223._SUBSTRATE_PROCESSING_METHOD_AND_SUBSTRATE_PROCESSING_APPARATUS_simplified_abstract_(Tokyo_Electron_Limited)&oldid=32816"