20240045461. BIASING CONTROL FOR COMPOUND SEMICONDUCTORS simplified abstract (Semtech Corporation)

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BIASING CONTROL FOR COMPOUND SEMICONDUCTORS

Organization Name

Semtech Corporation

Inventor(s)

Christopher Iain Duff of Lancashire (GB)

BIASING CONTROL FOR COMPOUND SEMICONDUCTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240045461 titled 'BIASING CONTROL FOR COMPOUND SEMICONDUCTORS

Simplified Explanation

The abstract of this patent application describes a compound semiconductor integrated circuit that includes biasing circuitry for generating a bias voltage at a bias output node. The biasing circuitry consists of a first circuit branch that extends between a defined voltage and a supply voltage. This first circuit branch includes a first transistor configured as a current source to generate a defined current and a controllably variable resistance. The bias output node is connected to the first circuit branch at a first node located between the controllably variable resistance and the first transistor. The biasing circuitry is designed to vary the resistance value of the controllably variable resistance with a control voltage, thereby varying the value of the bias voltage.

  • The patent describes a compound semiconductor integrated circuit with biasing circuitry.
  • The biasing circuitry includes a first circuit branch with a first transistor and a controllably variable resistance.
  • The first transistor acts as a current source to generate a defined current.
  • The controllably variable resistance is located between the first transistor and the bias output node.
  • The resistance value of the controllably variable resistance can be varied using a control voltage, which in turn varies the bias voltage.

Potential applications of this technology:

  • This compound semiconductor integrated circuit can be used in various electronic devices that require precise biasing of voltages, such as amplifiers, oscillators, and sensors.
  • It can be utilized in communication systems, radar systems, and wireless devices to ensure accurate signal processing and transmission.

Problems solved by this technology:

  • The biasing circuitry provides a means to generate a bias voltage with a controllable value, allowing for precise control of circuit operation.
  • The controllably variable resistance enables fine-tuning of the bias voltage, ensuring optimal performance of the integrated circuit.

Benefits of this technology:

  • The compound semiconductor integrated circuit with biasing circuitry offers improved accuracy and stability in generating bias voltages.
  • It allows for flexibility in adjusting the bias voltage, enabling customization and optimization of circuit performance.
  • The controllably variable resistance provides a compact and efficient solution for varying the bias voltage, reducing the complexity and size of the integrated circuit.


Original Abstract Submitted

a compound semiconductor integrated circuit is disclosed, which includes biasing circuitry for generating a bias voltage at a bias output node. the biasing circuitry comprises a first circuit branch configured to extend between a defined voltage and a supply voltage. the first circuit branch includes a first transistor configured as a current source to generate a defined current in the first circuit branch and a controllably variable resistance. the bias output node is coupled to the first circuit branch at a first node which is between the controllably variable resistance and the first transistor. the biasing circuitry is operable so that the resistance value of the controllably variable resistance varies with a control voltage so as to vary the value of the bias voltage.