20240044041. SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT simplified abstract (GlobalWafers Co., Ltd.)

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SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT

Organization Name

GlobalWafers Co., Ltd.

Inventor(s)

Yu-Chiao Wu of Frontenac MO (US)

William Lynn Luter of St. Charles MO (US)

Richard J. Phillips of St. Peters MO (US)

James Dean Eoff of Montgomery City MO (US)

SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240044041 titled 'SYSTEMS AND METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING A VAPORIZED DOPANT

Simplified Explanation

The abstract describes an ingot puller used for producing a doped single crystal silicon ingot. The ingot puller consists of a housing with a chamber, a crucible placed inside the chamber, and a dopant injector attached to the housing. The chamber is maintained at a specific pressure, and the dopant injector includes a reservoir for holding a liquid dopant, a feed tube connected to the reservoir and positioned within the chamber, and a vaporization cup placed within the feed tube and the chamber.

  • The ingot puller is designed to produce doped single crystal silicon ingots.
  • The housing contains a chamber where the process takes place.
  • A crucible is placed within the chamber to hold the silicon material.
  • The dopant injector is attached to the housing and extends into the chamber.
  • The chamber is maintained at a specific pressure during the process.
  • The dopant injector includes a reservoir for holding the liquid dopant.
  • A feed tube connects the reservoir to the chamber.
  • A vaporization cup is positioned within the feed tube and the chamber.

Potential applications of this technology:

  • Semiconductor industry: The doped single crystal silicon ingots produced by this ingot puller can be used in the manufacturing of semiconductors.
  • Solar cell production: The high-quality doped silicon ingots can be utilized in the production of solar cells, improving their efficiency and performance.
  • Electronics manufacturing: The doped silicon ingots can be used in the production of various electronic components, such as transistors and integrated circuits.

Problems solved by this technology:

  • Consistent doping: The ingot puller ensures precise and uniform doping of the silicon ingots, resulting in improved performance and reliability of semiconductor devices.
  • Contamination control: The design of the ingot puller minimizes the risk of contamination during the doping process, ensuring high purity of the silicon ingots.
  • Efficiency: The ingot puller allows for efficient and controlled doping, reducing material waste and optimizing the production process.

Benefits of this technology:

  • Improved performance: The doped single crystal silicon ingots produced by this ingot puller result in semiconductor devices with enhanced performance and functionality.
  • Cost-effective: The efficient doping process and reduced material waste contribute to cost savings in the production of silicon ingots.
  • High purity: The ingot puller ensures the production of high-purity silicon ingots, which are crucial for the manufacturing of high-quality semiconductor devices.


Original Abstract Submitted

an ingot puller for producing a doped single crystal silicon ingot includes a housing defining a chamber, a crucible disposed within the chamber, and a dopant injector attached to and extending into the housing. the chamber is maintained at a first pressure. the dopant injector includes a reservoir for containing a liquid dopant, a feed tube positioned within the chamber and connected to the reservoir, and a vaporization cup positioned within the feed tube and the chamber.

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