20240040808. TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION simplified abstract (Applied Materials, Inc.)
TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION
Organization Name
Inventor(s)
M. Arif Zeeshan of Manchester-by-the-Sea MA (US)
Kelvin Chan of San Ramon CA (US)
Shantanu Kallakuri of Ithaca NY (US)
Sony Varghese of Manchester-by-the-Sea MA (US)
TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240040808 titled 'TECHNIQUES AND DEVICE STRUCTURE BASED UPON DIRECTIONAL SEEDING AND SELECTIVE DEPOSITION
Simplified Explanation
The abstract describes a method for selectively forming a deposit on a substrate with surface features at a non-zero angle of inclination. A reactive beam is directed to the surface features, depositing a seed layer on some portions while not depositing on others. The substrate is then exposed to a reactive deposition process, causing a deposit layer to selectively grow over the seed layer.
- The method involves providing a substrate with surface features at a non-zero angle of inclination.
- A reactive beam is directed to the surface features at a non-zero angle of incidence.
- A seed layer is deposited on a first portion of the surface features, but not on a second portion.
- The substrate is exposed to a reactive deposition process.
- A deposit layer selectively grows over the seed layer.
Potential Applications:
- Semiconductor manufacturing: This method can be used to selectively form deposits on semiconductor substrates, enabling the fabrication of complex electronic devices.
- Optics and photonics: The technique can be applied to create selective coatings on optical components, improving their performance and functionality.
- Microelectromechanical systems (MEMS): MEMS devices often require precise deposition of materials, and this method can offer selective and controlled deposition for MEMS fabrication.
Problems Solved:
- Selective deposition: The method allows for the controlled deposition of a seed layer on specific surface features, enabling selective growth of a deposit layer.
- Angle-dependent deposition: By utilizing the non-zero angle of inclination of the surface features and the angle of incidence of the reactive beam, the method achieves selective deposition based on the surface geometry.
Benefits:
- Selective and controlled deposition: The method provides a way to selectively deposit materials on specific areas of a substrate, allowing for precise control over the growth of deposit layers.
- Enhanced functionality: By selectively forming deposits, the method enables the creation of complex structures and patterns, enhancing the functionality of various devices.
- Improved manufacturing efficiency: The ability to selectively deposit materials reduces waste and improves the efficiency of manufacturing processes.
Original Abstract Submitted
in one embodiment, a method of selectively forming a deposit may include providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. the method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. the method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.
