20240040701. Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kao-Chih Liu of Changhua County (TW)

Wenmin Hsu of Hsinchu (TW)

Yu-Ting Lin of Hsin-Chu City (TW)

Chia Hong Lin of Hsinchu County (TW)

ChienYi Chen of Hsinchu City (TW)

Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240040701 titled 'Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes

Simplified Explanation

The abstract describes an integrated circuit (IC) chip assembly that includes an IC die with transistors formed on a first substrate. The assembly also includes a first structure with first metallization components and a second structure with second metallization components. The first structure is located on one side of the first substrate, while the second structure is located on the opposite side. The IC die is bonded to a second substrate through the second side, and a trench extends through the second substrate and the second structure of the IC die, with protective layers defining the sidewalls of the trench.

  • The IC chip assembly includes an IC die with transistors formed on a first substrate.
  • The assembly has a first structure containing first metallization components and a second structure containing second metallization components.
  • The first structure is located on one side of the first substrate, while the second structure is located on the opposite side.
  • The IC die is bonded to a second substrate through the second side.
  • A trench extends through the second substrate and the second structure of the IC die.
  • The sidewalls of the trench are defined, at least in part, by one or more protective layers.

Potential Applications:

  • This technology can be used in the manufacturing of integrated circuit chip assemblies.
  • It can be applied in various electronic devices that utilize integrated circuits, such as smartphones, computers, and IoT devices.

Problems Solved:

  • The integration of multiple metallization components and transistors in an IC chip assembly can be challenging.
  • The formation of a trench through the second substrate and the second structure of the IC die requires precise manufacturing techniques.

Benefits:

  • The integration of multiple metallization components and transistors in a chip assembly allows for increased functionality and performance.
  • The use of protective layers in defining the sidewalls of the trench enhances the reliability and durability of the IC chip assembly.


Original Abstract Submitted

an integrated circuit (ic) chip assembly includes an integrated circuit (ic) die that includes a first substrate in which plurality of transistors is formed, a first structure that contains a plurality of first metallization components, and a second structure that contains a plurality of second metallization components. the first structure is disposed over a first side of the first substrate. the second structure is disposed over a second side of the first substrate opposite the first side. the chip assembly includes a second substrate bonded to the ic die through the second side. the chip assembly includes a trench that extends through the second substrate and through the second structure of the ic die. sidewalls of the trench are defined at least in part by one or more protective layers.

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