20240038583. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

In Ku Kang of Icheon-si Gyeonggi-do (KR)

Sung Hyun Yoon of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240038583 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that consists of a stack structure with conductive patterns separated by air gaps. The stack structure also includes a channel structure and a slit insulating layer that penetrates it. The slit insulating layer has two parts: a first interposition part that covers the sidewall of one of the conductive patterns, and a second interposition part that covers one of the air gaps from the side. The second interposition part is narrower than the first interposition part.

  • The semiconductor device includes a stack structure with conductive patterns and air gaps.
  • A channel structure penetrates the stack structure.
  • A slit insulating layer also penetrates the stack structure.
  • Air gaps are defined between the conductive patterns.
  • The slit insulating layer has a first interposition part covering a sidewall of one of the conductive patterns.
  • The slit insulating layer also has a second interposition part covering one of the air gaps from the side.
  • The second interposition part is narrower than the first interposition part.

Potential applications of this technology:

  • Semiconductor devices with improved performance and efficiency.
  • Integration of multiple functions in a compact space.
  • Enhanced reliability and durability of semiconductor devices.

Problems solved by this technology:

  • Reduction of parasitic capacitance and resistance in semiconductor devices.
  • Prevention of short circuits between conductive patterns.
  • Improved insulation and isolation between components.

Benefits of this technology:

  • Higher performance and efficiency of semiconductor devices.
  • Increased integration capabilities.
  • Enhanced reliability and durability of semiconductor devices.


Original Abstract Submitted

a semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. air gaps are defined between the conductive patterns. the slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. a smallest width of the second interposition part is smaller than a smallest width of the first interposition part.

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