20240036427. DISPLAY DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
DISPLAY DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Susumu Kawashima of Atsugi (JP)
DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240036427 titled 'DISPLAY DEVICE
Simplified Explanation
The abstract describes a high-aperture-ratio liquid crystal display (LCD) device or a high-definition LCD device. The device includes a transistor with a semiconductor layer, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer. It also includes a liquid crystal element with the second conductive layer, a third conductive layer, and a liquid crystal. Additionally, there is a first insulating layer with a first side surface over the first conductive layer.
- The device utilizes an oxide semiconductor film in the semiconductor layer of the transistor.
- The first insulating layer is in contact with the top surface of the first conductive layer and the first side surface.
- The gate insulating layer and the gate electrode are positioned facing the first side surface with the semiconductor layer in between.
- The second conductive layer is over the first insulating layer and in contact with the semiconductor layer.
- The third conductive layer is over the first insulating layer and overlaps with the second conductive layer.
Potential applications of this technology:
- High-aperture-ratio liquid crystal displays (LCDs)
- High-definition LCDs
Problems solved by this technology:
- Improved performance and efficiency of LCD devices
- Enhanced image quality and resolution
- Reduction in power consumption
Benefits of this technology:
- Higher aperture ratio, allowing more light to pass through the LCD
- Improved display quality with higher resolution and contrast
- Lower power consumption, leading to longer battery life in portable devices
- Enhanced performance and efficiency of LCD devices
Original Abstract Submitted
a high-aperture-ratio liquid crystal display device or a high-definition liquid crystal display device is provided. the display device includes a transistor including a semiconductor layer including an oxide semiconductor film, a gate insulating layer, a gate electrode, a first conductive layer, and a second conductive layer; a liquid crystal element including the second conductive layer including an oxide conductive film, a third conductive layer, and a liquid crystal; and a first insulating layer. the first insulating layer includes a first side surface over the first conductive layer. the semiconductor layer is in contact with a top surface of the first conductive layer and the first side surface. the gate insulating layer includes a portion facing the first side surface with the semiconductor layer therebetween. the gate electrode includes a portion facing the first side surface with the semiconductor layer and the gate insulating layer therebetween. the second conductive layer is over the first insulating layer and in contact with the semiconductor layer. the third conductive layer is over the first insulating layer and overlaps with the second conductive layer.
