20240036001. Miniature-Target-Detecting Transistors With Different Gate Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Miniature-Target-Detecting Transistors With Different Gate Structures

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wei Lee of Hsinchu City (TW)

Katherine H. Chiang of Hsinchu City (TW)

Pei-Wen Liu of Hsinchu City (TW)

Ke-Wei Su of Hsinchu County (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Miniature-Target-Detecting Transistors With Different Gate Structures - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240036001 titled 'Miniature-Target-Detecting Transistors With Different Gate Structures

Simplified Explanation

The patent application describes a substrate with a first side and a second side. On the first side, there are three transistors with different gates, and the second gate is positioned between the first and third gates. A structure with openings aligned to each transistor is disposed on the second side of the substrate. A sensing film is also placed on the second side and is designed to attach to specific miniature targets.

  • The substrate has three transistors with different gates placed on one side.
  • A structure with openings aligned to each transistor is present on the other side of the substrate.
  • A sensing film is placed on the second side of the substrate.
  • The sensing film is configured to attach to specific miniature targets.

Potential Applications:

  • This technology could be used in electronic devices that require precise sensing and control, such as touchscreens or biometric sensors.
  • It could also be applied in medical devices for detecting and monitoring specific biological markers or targets.

Problems Solved:

  • The technology solves the problem of accurately aligning the sensing film with the transistors on the substrate.
  • It provides a solution for attaching the sensing film to specific miniature targets.

Benefits:

  • The precise alignment of the sensing film with the transistors ensures accurate and reliable sensing capabilities.
  • The ability to attach the sensing film to predefined miniature targets allows for targeted and specific sensing applications.


Original Abstract Submitted

a substrate has a first side and a second side opposite the first side. a first transistor has a first gate, a second transistor has a second gate, and a third transistor has a third gate. the first gate, the second gate, and the third gate are each disposed over the first side of the substrate. the second gate is disposed between the first gate and the third gate. the first gate and the third gate have different material compositions. a structure is disposed over the second side of the substrate. the structure includes a first opening aligned with the first transistor, a second opening aligned with the second transistor, and a third opening aligned with the third transistor. a sensing film is disposed over the second side of the substrate. the sensing film is configured to attach to one or more predefined miniature targets.