20240033878. MINIMIZING SUBSTRATE BOW DURING POLISHING simplified abstract (Applied Materials, Inc.)
Contents
MINIMIZING SUBSTRATE BOW DURING POLISHING
Organization Name
Inventor(s)
Eric L. Lau of Santa Clara CA (US)
Huanbo Zhang of San Jose CA (US)
Ekaterina A. Mikhaylichenko of San Jose CA (US)
Christopher HeungGyun Lee of San Jose CA (US)
Jeonghoon Oh of Saratoga CA (US)
MINIMIZING SUBSTRATE BOW DURING POLISHING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240033878 titled 'MINIMIZING SUBSTRATE BOW DURING POLISHING
Simplified Explanation
The abstract of the patent application describes exemplary methods for chemical mechanical polishing (CMP) using a substrate carrier with a membrane. The methods involve engaging the substrate with the membrane of the substrate carrier and chucking the substrate against a substantially planar surface defined by the substrate carrier. This chucking action helps reduce any bow in the substrate. The methods also include polishing one or more materials on the substrate for a first period of time, followed by disengaging the substrate from the planar surface and polishing the materials for a second period of time.
- Exemplary polishing methods for chemical mechanical polishing (CMP) using a substrate carrier with a membrane.
- Engaging the substrate with the membrane of the substrate carrier.
- Chucking the substrate against a substantially planar surface defined by the substrate carrier to reduce substrate bow.
- Polishing one or more materials on the substrate for a first period of time.
- Disengaging the substrate from the planar surface.
- Polishing the one or more materials on the substrate for a second period of time.
Potential Applications
- Semiconductor manufacturing: These methods can be applied in the fabrication of semiconductor devices, where CMP is commonly used for planarizing and polishing various layers of materials.
- Optics manufacturing: The methods can be utilized in the production of optical components, such as lenses or mirrors, where precise polishing is crucial for achieving desired optical properties.
- Microelectronics manufacturing: The techniques can find application in the production of microelectronic devices, where CMP is used for polishing thin films and improving surface smoothness.
Problems Solved
- Bow reduction: The chucking action against the planar surface of the substrate carrier helps reduce any bow present in the substrate, ensuring a more uniform polishing process.
- Surface planarization: The CMP methods enable the planarization and polishing of various materials on the substrate, resulting in a smoother and more even surface.
- Material removal control: The disengagement and subsequent re-engagement of the substrate from the planar surface allows for controlled polishing of the materials, ensuring precise removal rates and achieving desired thicknesses.
Benefits
- Improved substrate flatness: By reducing the bow in the substrate, the methods contribute to achieving a flatter surface, which is essential for the successful fabrication of semiconductor devices and other precision components.
- Enhanced polishing control: The ability to disengage and re-engage the substrate from the planar surface enables better control over the polishing process, allowing for more precise material removal and achieving desired surface characteristics.
- Time efficiency: The two-step polishing approach, with a first period of time followed by disengagement and a second period of time, can potentially improve the efficiency of the polishing process, reducing overall production time.
Original Abstract Submitted
exemplary polishing methods for chemical mechanical polishing may include engaging a substrate with a membrane of a substrate carrier. the methods may include chucking the substrate against a substantially planar surface defined by the substrate carrier. the chucking may reduce a bow in the substrate. the methods may include polishing one or more materials on the substrate for a first period of time. the methods may include disengaging the substrate from the substantially planar surface. the methods may include polishing the one or more materials on the substrate for a second period of time.
