20240032301. NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE simplified abstract (INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES)

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NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE

Organization Name

INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor(s)

Huilong Zhu of Poughkeepsie NY (US)

NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240032301 titled 'NOR-TYPE MEMORY DEVICE, METHOD OF MANUFACTURING NOR-TYPE MEMORY DEVICE, AND ELECTRONIC APPARATUS INCLUDING MEMORY DEVICE

Simplified Explanation

The disclosed patent application describes a nor-type memory device, its manufacturing method, and its inclusion in an electronic apparatus. The memory device consists of multiple device layers on a substrate, each containing a stack of a first source/drain layer, a first channel layer, and a second source/drain layer. A gate stack extends vertically through the device layers and includes a gate conductor layer and a memory functional layer between the gate conductor layer and the stack. A memory cell is defined at the intersection of the gate stack and the stack.

  • The patent application describes a nor-type memory device with a unique structure and configuration.
  • The memory device includes multiple device layers, each containing a stack of source/drain layers and a channel layer.
  • A gate stack extends vertically through the device layers, consisting of a gate conductor layer and a memory functional layer.
  • The memory cell is defined at the intersection of the gate stack and the stack, allowing for efficient memory operations.

Potential Applications:

  • The nor-type memory device can be used in various electronic devices, such as smartphones, tablets, and computers.
  • It can be utilized in data storage systems, providing high-density and high-performance memory capabilities.
  • The memory device can be integrated into IoT devices, enabling efficient data processing and storage.

Problems Solved:

  • The disclosed memory device addresses the need for improved memory performance and density.
  • It solves the problem of limited storage capacity in electronic devices by providing a compact and efficient memory structure.
  • The device solves the challenge of data processing and storage in IoT devices by offering high-performance memory capabilities.

Benefits:

  • The nor-type memory device offers increased memory density, allowing for larger data storage capacities.
  • It provides faster data access and retrieval, enhancing overall system performance.
  • The memory device's compact structure enables integration into smaller electronic devices without compromising functionality.


Original Abstract Submitted

disclosed are a nor-type memory device, a method of manufacturing the nor-type memory device, and an electronic apparatus including the nor-type memory device. according to an embodiment, the nor-type memory device may include: a plurality of device layers disposed on a substrate, wherein each of the plurality of device layers includes a stack of a first source/drain layer, a first channel layer, and a second source/drain layer; and a gate stack that extends vertically with respect to the substrate to pass through the stack in the each of the plurality of device layers, wherein the gate stack includes a gate conductor layer and a memory functional layer disposed between the gate conductor layer and the stack, and a memory cell is defined at an intersection of the gate stack and the stack.

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