20240032280. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Chulkwon Park of Suwon-si (KR)
Gyunghyun Yoon of Suwon-si (KR)
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240032280 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract of the patent application describes an integrated circuit semiconductor device that includes field insulating layers buried in field trenches within a substrate. Active regions are defined by these field insulating layers, and active fins are disposed on the active regions, protruding from the surfaces of the field insulating layers. The field insulating layers consist of a first subfield insulating layer and a second subfield insulating layer, with the surface of the first subfield insulating layer positioned at a lower level than the surface of the second subfield insulating layer.
- The patent application describes an integrated circuit semiconductor device with buried field insulating layers and active fins.
- The field insulating layers define active regions on the device.
- The active fins are positioned on the active regions and protrude from the surfaces of the field insulating layers.
- The field insulating layers consist of a first subfield insulating layer and a second subfield insulating layer.
- The surface of the first subfield insulating layer is positioned at a lower level than the surface of the second subfield insulating layer.
Potential Applications:
- This technology can be applied in the manufacturing of integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.
- It can improve the performance and efficiency of integrated circuits, leading to faster and more reliable electronic devices.
Problems Solved:
- The buried field insulating layers help to isolate and protect the active regions of the integrated circuit, reducing interference and improving signal integrity.
- The active fins enhance the conductivity and performance of the integrated circuit, allowing for better functionality and higher speeds.
Benefits:
- The integrated circuit semiconductor device with buried field insulating layers and active fins offers improved performance and efficiency.
- It enables the production of smaller and more compact electronic devices without sacrificing functionality.
- The technology helps to reduce power consumption and heat generation in integrated circuits, leading to longer battery life and improved device reliability.
Original Abstract Submitted
an integrated circuit (ic) semiconductor device includes: field insulating layers buried in field trenches disposed apart from each other inside a substrate; active regions defined by the field insulating layers; and active fins disposed on the active regions and protruding from surfaces of the field insulating layers. the field insulating layers include a first subfield insulating layer and a second subfield insulating layer, and a surface of the first subfield insulating layer is disposed at a level lower than a level of a surface of the second subfield insulating layer.
