20240030682. VCSEL AND VCSEL CHIP WITH SMALL DIVERGENCE ANGLE AND LIGHT SOURCE FOR LIDAR SYSTEM simplified abstract (VERTILITE CO., LTD.)

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VCSEL AND VCSEL CHIP WITH SMALL DIVERGENCE ANGLE AND LIGHT SOURCE FOR LIDAR SYSTEM

Organization Name

VERTILITE CO., LTD.

Inventor(s)

Cheng Zhang of Jiangsu (CN)

Dong Liang of Jiangsu (CN)

VCSEL AND VCSEL CHIP WITH SMALL DIVERGENCE ANGLE AND LIGHT SOURCE FOR LIDAR SYSTEM - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240030682 titled 'VCSEL AND VCSEL CHIP WITH SMALL DIVERGENCE ANGLE AND LIGHT SOURCE FOR LIDAR SYSTEM

Simplified Explanation

The abstract of the patent application describes a vertical-cavity surface-emitting laser (VCSEL) structure. It consists of a lower Bragg reflection layer, an active layer, and an upper Bragg reflection layer. The active layer is positioned on one side of the lower Bragg reflection layer, while the upper Bragg reflection layer is located on the opposite side of the active layer. A current limiting layer is present either inside or outside the active layer, with an opening defining a light-emitting region. An extended cavity layer is placed between the lower Bragg reflection layer and the active layer, or between the upper Bragg reflection layer and the active layer. This extended cavity layer contains at least one resonant cavity, which is designed to enhance the optical field intensity within the extended cavity layer.

  • The patent application describes a VCSEL structure with a unique configuration to improve its performance.
  • The structure includes a lower Bragg reflection layer, an active layer, and an upper Bragg reflection layer.
  • A current limiting layer is incorporated inside or outside the active layer, with an opening for the light-emitting region.
  • An extended cavity layer is positioned between the lower or upper Bragg reflection layer and the active layer.
  • The extended cavity layer contains at least one resonant cavity, which enhances the optical field intensity.

Potential applications of this technology:

  • Optical communication systems: The improved VCSEL structure can be used in high-speed data transmission applications, such as fiber optic networks.
  • Sensing and detection: The enhanced optical field intensity can enable more sensitive and accurate sensing and detection systems, such as in environmental monitoring or biomedical applications.
  • Laser printing: The VCSEL structure can be utilized in laser printing devices for high-quality and efficient printing.

Problems solved by this technology:

  • Low optical field intensity: The resonant cavity within the extended cavity layer increases the optical field intensity, addressing the issue of low intensity in conventional VCSEL structures.
  • Limited current control: The current limiting layer helps regulate the current flow within the VCSEL, preventing excessive current and improving device stability.

Benefits of this technology:

  • Improved performance: The enhanced optical field intensity results in higher efficiency and better overall performance of the VCSEL.
  • Greater control: The current limiting layer allows for better control of the current flow, leading to improved stability and reliability of the VCSEL.
  • Versatility: The unique configuration of the VCSEL structure makes it suitable for various applications, including optical communication, sensing, and printing.


Original Abstract Submitted

a vcsel includes a lower bragg reflection layer, an active layer and an upper bragg reflection layer. the active layer is located on a side of the lower bragg reflection layer. the upper bragg reflection layer is located on a side of the active layer away from the lower bragg reflection layer. a current limiting layer is disposed inside or outside the active layer, and the current limiting layer has an opening for defining a light-emitting region. an extended cavity layer is disposed at least between the lower bragg reflection layer and the active layer or between the upper bragg reflection layer and the active layer, the extended cavity layer includes at least one resonant cavity inside, and the at least one resonant cavity is configured to increase the optical field intensity in the extended cavity layer.

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