20240030386. SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE CONNECTING STRUCTURE, AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE simplified abstract (DOWA Electronics Materials Co., Ltd.)

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SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE CONNECTING STRUCTURE, AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE

Organization Name

DOWA Electronics Materials Co., Ltd.

Inventor(s)

Takashi Momose of Chiyoda-ku, Tokyo (JP)

SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE CONNECTING STRUCTURE, AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240030386 titled 'SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE CONNECTING STRUCTURE, AND METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING DEVICE

Simplified Explanation

The abstract describes a semiconductor light-emitting device and a method of producing it. The device is designed to suppress detrimental effects such as electrode discoloration and emission failure caused by migration, even when a joint material containing silver (Ag) is used.

  • The semiconductor light-emitting device includes a p-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, and a pad on the p-type electrode.
  • The p-type electrode consists of an ohmic metal layer placed on the p-type semiconductor layer side and a barrier layer closer to the pad, which includes a tin layer.
  • The barrier layer has a circular surface diffusion inhibiting surface, which does not overlap with the electrical connection region between the pad and the barrier layer.

Potential applications of this technology:

  • LED lighting: The semiconductor light-emitting device can be used in LED lighting applications, providing improved reliability and longevity.
  • Display technology: The device can be integrated into displays, such as LED screens, to enhance performance and prevent electrode discoloration.

Problems solved by this technology:

  • Discoloration of electrodes: The device suppresses electrode discoloration, ensuring the longevity and performance of the light-emitting device.
  • Emission failure due to migration: The migration of materials can cause emission failure in light-emitting devices. This technology prevents migration-related issues, improving the reliability of the device.

Benefits of this technology:

  • Enhanced reliability: The suppression of detrimental effects ensures the device's reliability and longevity.
  • Improved performance: By preventing electrode discoloration and emission failure, the device maintains its performance over time.
  • Compatibility with joint materials containing silver: The technology allows the use of joint materials containing silver without experiencing the usual detrimental effects.


Original Abstract Submitted

provided is a semiconductor light-emitting device for which detrimental effects such as discoloration of an electrode or emission failure due to migration are suppressed even when a joint material containing ag is used, and a method of producing the same. the semiconductor light-emitting device includes a p-type semiconductor layer, a p-type electrode provided on the p-type semiconductor layer, and a pad provided on the p-type electrode. the p-type electrode at least has an ohmic metal layer placed on the p-type semiconductor layer side and a barrier layer that is placed closer to the pad than the ohmic metal layer and includes a tin layer. in a top view, when a region of the barrier layer that does not overlap an electrical connection region between the pad and the barrier layer is defined as a surface diffusion inhibiting surface, the surface diffusion inhibiting surface is formed in a circular pattern.

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