20240030260. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Taeyoung Song of Suwon-si (KR)
IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240030260 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a method of fabricating an image sensor using a semiconductor substrate. The method involves several steps, including forming a trench in the substrate to define pixel regions, doping the trench with dopants of a first conductivity type, doping the trench with dopants of a second conductivity type, forming an insulating liner pattern in the trench, performing a thermal treatment process on the substrate, and filling the trench with a filling pattern.
- The method begins by creating a trench in the semiconductor substrate to define pixel regions.
- The trench is then doped with dopants of a first conductivity type.
- After doping with the first conductivity type dopants, the trench is further doped with dopants of a second conductivity type.
- An insulating liner pattern is formed in the trench after the doping process.
- A thermal treatment process is performed on the substrate after the insulating liner pattern is formed.
- Finally, the trench is filled with a filling pattern to occupy the inner space.
Potential applications of this technology:
- Image sensors: The fabricated image sensor can be used in various applications such as digital cameras, smartphones, and surveillance systems.
- Medical imaging: The image sensor can be utilized in medical devices for capturing images in diagnostic imaging techniques like X-rays and ultrasounds.
- Industrial inspection: The technology can be applied in industrial inspection systems for quality control and defect detection in manufacturing processes.
Problems solved by this technology:
- Improved pixel definition: The method of forming trenches helps in defining pixel regions accurately, leading to better image quality and resolution.
- Enhanced conductivity control: The doping process with different conductivity types allows for precise control over the electrical properties of the image sensor, resulting in improved performance.
- Reduced crosstalk: The insulating liner pattern helps in reducing crosstalk between adjacent pixels, minimizing interference and improving image clarity.
Benefits of this technology:
- Higher sensitivity: The simultaneous diffusion of dopants of different conductivity types during the thermal treatment process enhances the sensitivity of the image sensor, enabling it to capture more detailed and accurate images.
- Improved signal-to-noise ratio: The precise control over conductivity and reduced crosstalk contribute to a higher signal-to-noise ratio, resulting in clearer and less noisy images.
- Cost-effective fabrication: The method utilizes existing semiconductor fabrication techniques, making it cost-effective and compatible with current manufacturing processes.
Original Abstract Submitted
a method of fabricating an image sensor includes providing a semiconductor substrate, forming a trench in the semiconductor substrate to define pixel regions, doping the trench with dopants of a first conductivity type, doping the trench with dopants of a second conductivity type after doping the trench with dopants of the first conductivity type, forming an insulating liner pattern in the trench after the doping of the trench, performing a first thermal treatment process on the semiconductor substrate after forming the insulating liner pattern, and forming a filling pattern filling an inner space of the trench after performing the first thermal treatment process. a diffusion coefficient of the dopants of the first conductivity type is greater than a diffusion coefficient of the dopants of the second conductivity type. the first thermal treatment process diffuses the dopants of the first and second conductivity types into the semiconductor substrate simultaneously.
