20240030248. ARRAY SUBSTRATE simplified abstract (Wuhan China Star Optoelectronics Display Technology Co., Ltd.)
Contents
ARRAY SUBSTRATE
Organization Name
Wuhan China Star Optoelectronics Display Technology Co., Ltd.
Inventor(s)
Fuhsiung Tang of Wuhan, Hubei (CN)
Jiyue Song of Wuhan, Hubei (CN)
ARRAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240030248 titled 'ARRAY SUBSTRATE
Simplified Explanation
The abstract of the patent application describes an array substrate that includes a semiconductor layer integrated with a pin photoelectric diode and an active area. The pin photoelectric diode consists of a p-type semiconductor area, an n-type semiconductor area, and an i-type semiconductor area located between the p-type and n-type areas. A gate electric current is introduced at the i-type semiconductor area to enhance light sensitivity.
- The array substrate integrates a pin photoelectric diode and an active area within a semiconductor layer.
- The pin photoelectric diode is composed of a p-type semiconductor area, an n-type semiconductor area, and an i-type semiconductor area.
- The i-type semiconductor area is located between the p-type and n-type semiconductor areas.
- A gate electric current is introduced at the i-type semiconductor area to enhance the sensitivity of the diode to light.
Potential Applications:
- Display technologies: The array substrate can be used in displays to enhance the light sensitivity of the pin photoelectric diode, resulting in improved image quality and brightness.
- Optical sensors: The enhanced light sensitivity of the pin photoelectric diode can be utilized in optical sensors for various applications such as proximity sensing, gesture recognition, and ambient light detection.
Problems Solved:
- Low light sensitivity: The introduction of a gate electric current at the i-type semiconductor area solves the problem of low light sensitivity in the pin photoelectric diode, allowing for better detection and utilization of light.
- Integration challenges: The integration of the pin photoelectric diode and active area within the array substrate addresses the challenge of incorporating multiple components into a compact and efficient design.
Benefits:
- Improved image quality: The enhanced light sensitivity of the pin photoelectric diode results in improved image quality in displays, with better contrast and brightness.
- Energy efficiency: The gate electric current introduced at the i-type semiconductor area allows for optimized power consumption, making the array substrate more energy-efficient.
- Compact design: The integration of the pin photoelectric diode and active area within the array substrate enables a compact and space-saving design, suitable for various electronic devices.
Original Abstract Submitted
an array substrate is disclosed. the array substrate includes a semiconductor layer integrated with a pin photoelectric diode and an active area. the pin photoelectric diode includes a p-type semiconductor area, an n-type semiconductor area, and an i-type semiconductor area defined between the p-type semiconductor area and the n-type semiconductor area. a gate electric current is introduced at a location corresponding to the i-type semiconductor area, so as to enhance light sensitivity.
