20240030239. ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF simplified abstract (Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.)

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ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

Organization Name

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Inventor(s)

Ziran Li of Shenzhen, Guangdong (CN)

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240030239 titled 'ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The present application discloses an array substrate and a manufacturing method thereof. The array substrate includes an underlay, an active layer, a gate electrode insulation layer, and a metal layer. The gate electrode insulation layer has several through holes defined in it. The second and third through holes are arranged in a way that shields partial regions of the active layer from corrosion by an etching solution. This ensures a normal electrical connection of the active layer with the source electrode and the drain electrode, improving the yield rate of the array substrate.

  • The array substrate includes an underlay, active layer, gate electrode insulation layer, and metal layer.
  • The gate electrode insulation layer has multiple through holes defined in it.
  • The second and third through holes are arranged to shield partial regions of the active layer.
  • This prevents corrosion of the active layer by the etching solution.
  • The shielding ensures a normal electrical connection of the active layer with the source and drain electrodes.
  • The improved electrical connection improves the yield rate of the array substrate.

Potential Applications

This technology can be applied in the manufacturing of array substrates for various electronic devices, such as displays, sensors, and integrated circuits.

Problems Solved

1. Corrosion of the active layer by the etching solution. 2. Poor electrical connection between the active layer and the source/drain electrodes.

Benefits

1. Improved yield rate of the array substrate. 2. Enhanced electrical connection reliability. 3. Prevention of corrosion damage to the active layer. 4. Increased overall performance and longevity of electronic devices utilizing this technology.


Original Abstract Submitted

an embodiment of the present application discloses an array substrate and a manufacturing method thereof. the array substrate includes an underlay, an active layer, a gate electrode insulation layer, and a metal layer. a first through hole, second through holes, third through holes, and a fourth through hole are defined in the gate electrode insulation layer. the second through holes and third through holes are arranged at intervals such that partial regions of the active layer are shielded by the gate electrode insulation layer to prevent them from corrosion of an etching solution to guarantee a normal electrical connection of the active layer and a source electrode and a drain electrode and improve a yield rate of the array substrate.

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