20240029998. DUAL SOURCE INJECTOR WITH SWITCHABLE ANALYZING MAGNET simplified abstract (Axcelis Technologies, Inc.)
Contents
DUAL SOURCE INJECTOR WITH SWITCHABLE ANALYZING MAGNET
Organization Name
Inventor(s)
Wilhelm Platow of Newburyport MA (US)
Neil Bassom of Hamilton MA (US)
DUAL SOURCE INJECTOR WITH SWITCHABLE ANALYZING MAGNET - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240029998 titled 'DUAL SOURCE INJECTOR WITH SWITCHABLE ANALYZING MAGNET
Simplified Explanation
The abstract describes an ion implantation system that includes a mass analyzing magnet with an interior and exterior region. The magnet has a first entrance, second entrance, and an exit. There are two ion sources, each defining an ion beam directed towards the respective entrance along a beam path. A magnet current source supplies a magnet current to the mass analyzing magnet, and magnet control circuitry controls the polarity of the magnet current based on the formation of the ion beam. The mass analyzing magnet analyzes the ion beam to define a mass analyzed ion beam along a mass analyzed beam path. At least one shield prevents line-of-sight between the ion sources. Beamline components modify the mass analyzed ion beam.
- The patent describes an ion implantation system with a mass analyzing magnet that can analyze ion beams from two different sources.
- The magnet current source and control circuitry allow for the control of the magnet polarity based on the ion beam formation.
- The system includes shields to prevent interference between the ion sources.
- Beamline components are used to modify the mass analyzed ion beam.
Potential applications of this technology:
- Ion implantation systems are commonly used in semiconductor manufacturing for doping processes, where ions are implanted into a material to alter its electrical properties. This technology could improve the efficiency and accuracy of ion implantation processes.
- The ability to analyze ion beams from multiple sources can be beneficial in research and development of new materials, as it allows for more flexibility in studying different ion species.
Problems solved by this technology:
- The use of multiple ion sources and the ability to control the magnet polarity based on ion beam formation can help overcome limitations in traditional ion implantation systems, such as limited ion species and beam control.
- The shields prevent interference between the ion sources, ensuring accurate analysis of the ion beams.
Benefits of this technology:
- Improved efficiency and accuracy in ion implantation processes, leading to better semiconductor devices.
- Increased flexibility in studying different ion species, enabling research and development of new materials.
- Enhanced control over ion beams, allowing for precise manipulation and modification of materials.
Original Abstract Submitted
an ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. a first ion source defines a first ion beam directed toward the first entrance along a first beam path. a second ion source defines a second ion beam directed toward the second entrance along a second beam path. a magnet current source supplies a magnet current to the mass analyzing magnet. magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. the mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. at least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. beamline components modify the mass analyzed ion beam.
